D
D. T. McInturff
Researcher at IBM
Publications - 28
Citations - 958
D. T. McInturff is an academic researcher from IBM. The author has contributed to research in topics: Molecular beam epitaxy & Doping. The author has an hindex of 13, co-authored 28 publications receiving 948 citations.
Papers
More filters
Journal ArticleDOI
Arsenic precipitates and the semi‐insulating properties of GaAs buffer layers grown by low‐temperature molecular beam epitaxy
A. C. Warren,Jerry M. Woodall,John L. Freeouf,Daniel R. Grischkowsky,D. T. McInturff,Michael R. Melloch,Nobuo Otsuka +6 more
TL;DR: Arsenic precipitates have been observed in GaAs low-temperature buffer layers (LTBLs) used as "substrates" for normal molecular beam epitaxy growth as mentioned in this paper.
Patent
Method of making a compound semiconductor having metallic inclusions
J. Burroughes,Rodney T. Hodgson,D. T. McInturff,M. R. Melloch,Nobuo Otsuka,Paul M. Solomon,A. C. Warren,Jerry M. Woodall +7 more
TL;DR: A doped or undoped photoresponsive material having metallic precipitates, and a PiN photodiode utilizing the material for detecting light having a wavelength of 1.3 micrometers was presented in this paper.
Journal ArticleDOI
1.3- mu m P-i-N photodetector using GaAs with As precipitates (GaAs:As)
A. C. Warren,J. Burroughes,Jerry M Woodall,D. T. McInturff,Rodney T. Hodgson,Michael R. Melloch +5 more
TL;DR: In this article, the fabrication of a GaAs detector which operates in the 1.3-to 1.5-mu m optical range is reported and the detector is a P-i-N photodiode with an intrinsic layer composed of undoped GaAs which was grown at 225 degrees C and subsequently annealed at 600 degrees C. This growth process has been demonstrated to produce a high density of As precipitates in the low-temperature grown region, which the authors show to exhibit absorption through internal photoemission.
Journal ArticleDOI
Characterization of photochemically unpinned GaAs
Carl W. Wilmsen,Peter D. Kirchner,J. M. Baker,D. T. McInturff,George David Pettit,Jerry M. Woodall +5 more
TL;DR: In this article, a photoactivation step involving water vapor is required to achieve the flat-band condition of etched GaAs(100) surface, which is relatively insensitive to surface treatment prior to photowashing.
Journal ArticleDOI
Use of nonstoichiometry to form GaAs tunnel junctions
TL;DR: In this article, a tunnel diode was formed from GaAs containing excess arsenic incorporated by molecular beam epitaxy at reduced substrate temperatures, and the incorporation of excess arsenic during growth results in a more efficient incorporation of silicon on donor sites and beryllium on acceptor sites.