Journal ArticleDOI
Monolithically integrated InGaAs/GaAs/AlGaAs quantum well laser grown by MOCVD on exact Ge/Si(001) substrate
V. Ya. Aleshkin,V. Ya. Aleshkin,N. V. Baidus,Alexander A. Dubinov,Alexander A. Dubinov,A. G. Fefelov,Z. F. Krasilnik,Z. F. Krasilnik,K. E. Kudryavtsev,K. E. Kudryavtsev,S. M. Nekorkin,A. V. Novikov,A. V. Novikov,D. A. Pavlov,I. V. Samartsev,E. V. Skorokhodov,Mikhail Shaleev,A. A. Sushkov,Artem N. Yablonskiy,Pavel A. Yunin,D. V. Yurasov,D. V. Yurasov +21 more
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TLDR
In this article, the InGaAs/GAAs/AlGaAs quantum well laser was realized by metallorganic chemical vapor deposition on a virtual Ge-on-Si(001) substrate.Abstract:
We report on realization of the InGaAs/GaAs/AlGaAs quantum well laser grown by metallorganic chemical vapor deposition on a virtual Ge-on-Si(001) substrate. The Ge buffer layer has been grown on a nominal Si(001) substrate by solid-source molecular beam epitaxy. Such Ge buffer possessed rather good crystalline quality and smooth surface and so provided the subsequent growth of the high-quality A3B5 laser structure. The laser operation has been demonstrated under electrical pumping at 77 K in the continuous wave mode and at room temperature in the pulsed mode. The emission wavelengths of 941 nm and 992 nm have been obtained at 77 K and 300 K, respectively. The corresponding threshold current densities were estimated as 463 A/cm2 at 77 K and 5.5 kA/cm2 at 300 K.read more
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Journal ArticleDOI
Ultra-low threshold InAs/GaAs quantum dot microdisk lasers on planar on-axis Si (001) substrates
Taojie Zhou,Mingchu Tang,Guohong Xiang,Xuan Fang,Xiu Liu,Boyuan Xiang,Suikong Hark,Mickael Martin,Marie-Leonor Touraton,Thierry Baron,Ying Lu,Siming Chen,Huiyun Liu,Zhaoyu Zhang +13 more
TL;DR: In this article, the InAs/GaAs QD microdisk laser was grown on planar on-axis Si (001) substrate with an ultra-low lasing threshold at room temperature under continuous-wave optical pumping.
Journal ArticleDOI
Heat-sink free CW operation of injection microdisk lasers grown on Si substrate with emission wavelength beyond 1.3 μm.
N. V. Kryzhanovskaya,Eduard Moiseev,Yulia S. Polubavkina,Mikhail V. Maximov,M. M. Kulagina,Sergey I. Troshkov,Yury M. Zadiranov,Yulia Guseva,Andrey A. Lipovskii,Mingchu Tang,Mengya Liao,Jiang Wu,Siming Chen,Huiyun Liu,Alexey E. Zhukov +14 more
TL;DR: High-performance injection microdisk (MD) lasers grown on Si substrate are demonstrated for the first time and the high stability of the lasing wavelength and the low specific thermal resistance are demonstrated.
Journal ArticleDOI
Review of Highly Mismatched III-V Heteroepitaxy Growth on (001) Silicon
Yong Du,Buqing Xu,Gui Quan Wang,Yuanhao Miao,Ben Li,Zhenzhen Kong,Yan Dong,Wenwu Tang,Henry H. Radamson +8 more
TL;DR: In this article , the defects formation and defects suppression methods to grow III-V materials on Si substrate (such as GaAs and InP), so as to give readers a full understanding on the group III-v hetero-epitaxial growth on Si substrates.
Journal ArticleDOI
Silicon-based PbS-CQDs infrared photodetector with high sensitivity and fast response
Yuanlin Shi,Zhiming Wu,Zihao Xiang,Pengyu Chen,Chunyu Li,Hongxi Zhou,Xiang Dong,Jun Gou,Jun Wang,Yadong Jiang +9 more
TL;DR: This work demonstrated a silicon-compatible photodetector that could be integrated on-chip, and also sensitive to infrared light which is owing to a PbS-CQDs absorption layer with tunable bandgap and paves the way for the realization of cost-efficient high-performance silicon compatible infrared optoelectronic devices.
Journal ArticleDOI
Theoretical Study on the Effects of Dislocations in Monolithic III-V Lasers on Silicon
Constanze Hantschmann,Zizhuo Liu,Mingchu Tang,Siming Chen,Alwyn J. Seeds,Huiyun Liu,Ian H. White,Richard V. Penty +7 more
TL;DR: In this paper, the authors present an approach to modeling III-V lasers on silicon based on a travelling-wave rate equation model with sub-micrometer resolution by allowing spatially resolved inclusion of individual dislocations along the laser cavity, which offers new insights into the physical mechanisms behind the characteristics of 980nm In(Ga)As/GaAs quantum well (QW) and 1.3μm quantum dot (QD) lasers grown on silicon.
References
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Journal ArticleDOI
Single-chip microprocessor that communicates directly using light
Chen Sun,Chen Sun,Mark T. Wade,Yunsup Lee,Jason S. Orcutt,Jason S. Orcutt,Luca Alloatti,Michael Georgas,Andrew Waterman,Jeffrey M. Shainline,Jeffrey M. Shainline,Rimas Avizienis,Sen Lin,Benjamin Moss,Rajesh Kumar,Fabio Pavanello,Amir H. Atabaki,Henry Cook,Albert Ou,Jonathan Leu,Yu-Hsin Chen,Krste Asanovic,Rajeev J. Ram,Milos A. Popovic,Vladimir Stojanovic +24 more
TL;DR: This demonstration could represent the beginning of an era of chip-scale electronic–photonic systems with the potential to transform computing system architectures, enabling more powerful computers, from network infrastructure to data centres and supercomputers.
Journal ArticleDOI
High-quality Ge epilayers on Si with low threading-dislocation densities
Hsin-Chiao Luan,Desmond R. Lim,Kevin K. Lee,Kevin M. Chen,Jessica G. Sandland,Kazumi Wada,Lionel C. Kimerling +6 more
TL;DR: In this paper, a two-step ultrahigh vacuum/chemical-vapor-deposition process followed by cyclic thermal annealing was proposed for making high-quality epilayers on Si.
Journal ArticleDOI
Electrically pumped continuous-wave III–V quantum dot lasers on silicon
Siming Chen,Wei Li,Jiang Wu,Qi Jiang,Mingchu Tang,Samuel Shutts,Stella N. Elliott,Angela Sobiesierski,Alwyn J. Seeds,Ian M. Ross,Peter Michael Smowton,Huiyun Liu +11 more
TL;DR: In this paper, the authors demonstrate continuous-wave InAs/GaAs quantum dot lasers directly grown on silicon substrates with a low threshold current density of 62.5 cm−2, a room-temperature output power exceeding 105mW and operation up to 120°C.
Journal ArticleDOI
High performance continuous wave 1.3 μm quantum dot lasers on silicon
Alan Y. Liu,Chong Zhang,Justin Norman,Andrew Snyder,Dmitri Lubyshev,Joel M. Fastenau,Amy W. K. Liu,Arthur C. Gossard,John E. Bowers +8 more
TL;DR: In this article, a Ridge waveguide laser with P-modulation doping of active region improves T0 to the range of 100-200 K while maintaining low thresholds and high output powers.
Journal ArticleDOI
GaP-nucleation on exact Si (0 0 1) substrates for III/V device integration
Kerstin Volz,Andreas Beyer,Wiebke Witte,Jens Ohlmann,I. Nemeth,Bernardette Kunert,Wolfgang Stolz +6 more
TL;DR: In this paper, a defect-free GaP layer on exactly oriented Si (0.0.1) surfaces has been shown to achieve a charge neutral interface and two-dimensional growth.