D
D. Widmer
Researcher at IBM
Publications - 5
Citations - 2101
D. Widmer is an academic researcher from IBM. The author has contributed to research in topics: Charge carrier & Non-volatile memory. The author has an hindex of 5, co-authored 5 publications receiving 2033 citations.
Papers
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Journal ArticleDOI
Reproducible switching effect in thin oxide films for memory applications
TL;DR: In this article, it was shown that positive or negative voltage pulses can switch the resistance of the oxide films between a low- and a high-impedance state in times shorter than 100 ns.
Journal ArticleDOI
Current-driven insulator–conductor transition and nonvolatile memory in chromium-doped SrTiO3 single crystals
Yukio Watanabe,Yukio Watanabe,Johannes Georg Bednorz,Alexander Bietsch,Ch. Gerber,D. Widmer,A. Beck,A. Beck,Shalom J. Wind +8 more
TL;DR: In this article, a dc-current-induced reversible insulator-conductor transition with resistance changes of up to five orders of magnitude was found in doped SrTiO3 single crystals.
Journal ArticleDOI
Electrical current distribution across a metal–insulator–metal structure during bistable switching
TL;DR: In this article, the authors combine scanning electron microscopy and electron-beam-induced current imaging with transport measurements to show that the current flowing across a two-terminal oxide-based capacitor-like structure is preferentially confined in areas localized at defects.
Journal ArticleDOI
Electrical-stress-induced conductivity increase in SrTiO3 films
TL;DR: In this article, the effect of electrical stress on the conduction mechanism of polycrystalline SrTiO3:Cr films is analyzed to understand the forming process of samples exhibiting resistance-switching phenomena.
Journal ArticleDOI
Electrical current distribution across a metal-insulator-metal structure during bistable switching
TL;DR: In this article, the authors combine scanning electron microscopy (SEM) and electron-beam-induced current (EBIC) imaging with transport measurements to show that the current flowing across a two-terminal oxide-based capacitor-like structure is preferentially confined in areas localized at defects.