Daniel Pardo

TL;DR: In this paper, a semi-classical two-dimensional Monte Carlo simulation of simple devices (T-branch junctions (TBJs) and rectifying diodes) based on AlInAs/InGaAs ballistic channels are analyzed.

TL;DR: In this paper, a semi-classical two-dimensional (2D) Monte Carlo simulation is used to analyze simple ballistic devices based on AlInAs/InGaAs channels.

TL;DR: Song et al. as discussed by the authors provided an in depth explanation of the operation of the self-switching diode, based on electrostatic effects, by means of the microscopic transport description supplied by a semiclassical two-dimensional Monte Carlo simulator.

TL;DR: In this article, a classical Monte Carlo (MC) device simulation has been modified to locally introduce the effects of electron degeneracy and nonequilibrium screening, and its validity in the case of AlInAs/GaInAs HEMTs has been checked through the comparison, first, with a quantum Schrodinger-Poisson (SP) simulation, which is actually used in the fabrication of real devices, and second, with experimental results of static characteristics.

TL;DR: In this paper, the authors investigated the role of the ohmic contact on the electrical characteristics of a GaAs Schottky-barrier diode under forward bias condition and found that the best simulation of the carrier dynamics near the contact is achieved by using a velocity-weighted Maxwellian distribution for injecting the carriers, which provides flat profiles of the different magnitudes near the boundary and a zero voltage drop at the contact.