T
Tomas Gonzalez
Researcher at University of Salamanca
Publications - 311
Citations - 3517
Tomas Gonzalez is an academic researcher from University of Salamanca. The author has contributed to research in topics: Monte Carlo method & Noise (electronics). The author has an hindex of 28, co-authored 299 publications receiving 3305 citations. Previous affiliations of Tomas Gonzalez include University of Manchester & Centre national de la recherche scientifique.
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Journal ArticleDOI
Voltage tuneable terahertz emission from a ballistic nanometer InGaAs∕InAlAs transistor
J. Lusakowski,Wojciech Knap,Nina Dyakonova,Luca Varani,Javier Mateos,Tomas Gonzalez,Y. Roelens,Sylvain Bollaert,Alain Cappy,Krzysztof Karpierz +9 more
TL;DR: In this paper, a threshold-like emission from InGaAs∕InAlAs lattice-matched high electron mobility transistors was observed in a thresholdlike manner when the applied drain-to-source voltage UDS is larger than a threshold value UTH.
Journal ArticleDOI
Microwave detection at 110 GHz by nanowires with broken symmetry
Claudio Balocco,Aimin Song,M Aberg,Alfred Forchel,Tomas Gonzalez,Javier Mateos,Ivan Maximov,Mohamed Missous,Ali A. Rezazadeh,J Saijets,Lars Samuelson,Daniel Wallin,K. Williams,Lukas Worschech,Hongqi Xu +14 more
TL;DR: By using arrays of nanowires with intentionally broken symmetry, they were able to detect microwaves up to 110 GHz at room temperature, which is, to the best of the knowledge, the highest speed that has been demonstrated in different types of novel electronic nanostructures to date.
Journal ArticleDOI
Monte Carlo simulator for the design optimization of low-noise HEMTs
TL;DR: In this article, a complete analysis of low-noise 0.1 /spl mu/m gate AlInAs-GaInAs HEMTs has been performed by using a semiclassical Monte Carlo simulation.
Journal ArticleDOI
Ballistic nanodevices for terahertz data processing: Monte Carlo simulations
Javier Mateos,Beatriz G. Vasallo,Daniel Pardo,Tomas Gonzalez,J.S. Galloo,Y. Roelens,Sylvain Bollaert,Alain Cappy +7 more
TL;DR: In this paper, a semi-classical two-dimensional Monte Carlo simulation of simple devices (T-branch junctions (TBJs) and rectifying diodes) based on AlInAs/InGaAs ballistic channels are analyzed.
Journal ArticleDOI
Microscopic modeling of nonlinear transport in ballistic nanodevices
Javier Mateos,Beatriz G. Vasallo,Daniel Pardo,Tomas Gonzalez,J.S. Galloo,Sylvain Bollaert,Yannick Roelens,A. Cappy +7 more
TL;DR: In this paper, a semi-classical two-dimensional (2D) Monte Carlo simulation is used to analyze simple ballistic devices based on AlInAs/InGaAs channels.