D
Daniele Ercolani
Researcher at Nest Labs
Publications - 132
Citations - 3075
Daniele Ercolani is an academic researcher from Nest Labs. The author has contributed to research in topics: Nanowire & Terahertz radiation. The author has an hindex of 29, co-authored 132 publications receiving 2767 citations. Previous affiliations of Daniele Ercolani include AREA Science Park & Scuola Normale Superiore di Pisa.
Papers
More filters
Journal ArticleDOI
Ultrafast multi-terahertz nano-spectroscopy with sub-cycle temporal resolution
Max Eisele,Tyler L. Cocker,Markus A. Huber,Markus Plankl,Leonardo Viti,Daniele Ercolani,Lucia Sorba,Miriam S. Vitiello,Rupert Huber +8 more
TL;DR: In this paper, the authors demonstrate ultrabroadband time-resolved terahertz spectroscopy on a single InAs nanowire with 10nm spatial resolution and sub-100 fs time resolution.
Journal ArticleDOI
Room-Temperature Terahertz Detectors Based on Semiconductor Nanowire Field-Effect Transistors
Miriam S. Vitiello,D. Coquillat,Leonardo Viti,Daniele Ercolani,Frederic Teppe,Alessandro Pitanti,Fabio Beltram,Lucia Sorba,Wojciech Knap,Alessandro Tredicucci +9 more
TL;DR: It is demonstrated that semiconductor nanowires can also be used as building blocks for the realization of high-sensitivity terahertz detectors based on a 1D field-effect transistor configuration.
Journal ArticleDOI
InAs/InSb nanowire heterostructures grown by chemical beam epitaxy.
Daniele Ercolani,Francesca Rossi,Ang Li,Stefano Roddaro,Vincenzo Grillo,Giancarlo Salviati,Fabio Beltram,Lucia Sorba +7 more
TL;DR: It is shown, through HRTEM analysis, that zincblende InSb can be grown without any crystal defects such as stacking faults or twinning planes and is nearly relaxed within a few nanometers from the interface.
Journal ArticleDOI
Unit Cell Structure of Crystal Polytypes in InAs and InSb Nanowires
Dominik Kriegner,Christian Panse,Bernhard Mandl,Kimberly A. Dick,Mario Keplinger,Johan Mikael Persson,Philippe Caroff,Daniele Ercolani,Lucia Sorba,Friedhelm Bechstedt,Julian Stangl,Günther Bauer +11 more
TL;DR: Experiment and theory show that the occurrence of hexagonal bilayers tends to stretch the distances of atomic layers parallel to the c axis and to reduce the in-plane distances compared to those in zinc blende.
Journal ArticleDOI
Strain induced effects on the transport properties of metamorphic InAlAs/InGaAs quantum wells
Flavio Capotondi,Giorgio Biasiol,Daniele Ercolani,Vincenzo Grillo,Elvio Carlino,Filippo Romanato,Lucia Sorba +6 more
TL;DR: In this paper, the relationship between structural and low-temperature transport properties is explored for metamorphic quantum wells with x > 0.7 grown on GaAs by molecular beam epitaxy and different step-graded buffer layers are used to gradually adapt the inplane lattice parameter from the GaAs towards the InGaAs value.