D
D. Coquillat
Researcher at University of Montpellier
Publications - 41
Citations - 4521
D. Coquillat is an academic researcher from University of Montpellier. The author has contributed to research in topics: Terahertz radiation & Field-effect transistor. The author has an hindex of 23, co-authored 33 publications receiving 4013 citations. Previous affiliations of D. Coquillat include Centre national de la recherche scientifique.
Papers
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Journal ArticleDOI
Graphene field-effect transistors as room-temperature terahertz detectors
L. Vicarelli,Miriam S. Vitiello,D. Coquillat,Antonio Lombardo,Andrea C. Ferrari,Wojciech Knap,Marco Polini,Vittorio Pellegrini,Alessandro Tredicucci +8 more
TL;DR: In this paper, an efficient room-temperature graphene detector for terahertz radiation was presented, which promises to be considerably faster than competing techniques, and is shown to have high carrier mobility.
Journal ArticleDOI
Plasma wave detection of terahertz radiation by silicon field effects transistors: Responsivity and noise equivalent power
R. Tauk,Frederic Teppe,S. Boubanga,D. Coquillat,Wojciech Knap,Yahya Moubarak Meziani,C. Gallon,Frederic Boeuf,Thomas Skotnicki,Claire Fenouillet-Beranger,Duncan K. Maude,Sergey L. Rumyantsev,Michael Shur +12 more
TL;DR: In this paper, Si metal oxide semiconductor field effect transistors (MOSFETs) with the gate lengths of 120-300nm have been studied as room temperature plasma wave detectors of 0.7THz electromagnetic radiation.
Journal ArticleDOI
Broadband terahertz imaging with highly sensitive silicon CMOS detectors
Franz Schuster,D. Coquillat,H. Videlier,Maciej Sakowicz,Frederic Teppe,Laurent Dussopt,Benoit Giffard,Thomas Skotnicki,Wojciech Knap +8 more
TL;DR: Terahertz detectors fabricated in a low-cost 130 nm silicon CMOS technology achieve a record responsivity above 5 kV/W and a noise equivalent power below 10 pW/Hz in the important atmospheric window around 300 GHz and at room temperature.
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Field Effect Transistors for Terahertz Detection: Physics and First Imaging Applications
Wojciech Knap,Michel Dyakonov,D. Coquillat,Frederic Teppe,Nina Dyakonova,Jerzy Łusakowski,Krzysztof Karpierz,Maciej Sakowicz,Gintaras Valušis,Dalius Seliuta,Irmantas Kašalynas,A. El Fatimy,Yahya Moubarak Meziani,Taiichi Otsuji +13 more
TL;DR: In this paper, the main theoretical and experimental results on THz detection by FETs in the context of their possible application for THz imaging are presented, where resonant and gate voltage tunable detection related to plasma waves resonances, is observed.
Journal ArticleDOI
Black Phosphorus Terahertz Photodetectors
Leonardo Viti,Jin Hu,D. Coquillat,Wojciech Knap,Wojciech Knap,Alessandro Tredicucci,Antonio Politano,Miriam S. Vitiello +7 more
TL;DR: The first technological demonstration of a phosphorus-based active active terahertz device is described, exploiting a 10 nm thick flake of exfoliated crystalline black phosphorus as an active channel of a field-effect transistor.