Three parallel algorithms for classical molecular dynamics are presented. The first assigns each processor a fixed subset of atoms; the second assigns each a fixed subset of inter-atomic forces to compute; the third assigns each a fixed spatial region. The algorithms are suitable for molecular dynamics models which can be difficult to parallelize efficiently—those with short-range forces where the neighbors of each atom change rapidly. They can be implemented on any distributed-memory parallel machine which allows for message-passing of data between independently executing processors. The algorithms are tested on a standard Lennard-Jones benchmark problem for system sizes ranging from 500 to 100,000,000 atoms on several parallel supercomputers--the nCUBE 2, Intel iPSC/860 and Paragon, and Cray T3D. Comparing the results to the fastest reported vectorized Cray Y-MP and C90 algorithm shows that the current generation of parallel machines is competitive with conventional vector supercomputers even for small problems. For large problems, the spatial algorithm achieves parallel efficiencies of 90% and a 1840-node Intel Paragon performs up to 165 faster than a single Cray C9O processor. Trade-offs between the three algorithms and guidelines for adapting them to more complex molecular dynamics simulations are also discussed.

Fast parallel algorithms for short-range molecular dynamics

다중혈관 관상동맥 환자에서 y-문합을 이용하여 양쪽 내흉동맥만을 사용한 우회술의 조기 성적

[신간의 별자리x] 우리/미술, 그리고 ‘슬픔의 박물관’

International Technology Roadmap for Semiconductors 2003の要求清浄度について － シリコンウエハ表面と雰囲気環境に要求される清浄度, 分析方法の現状について －

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Design Of Analog Cmos Integrated Circuits

The strategy to generate statistical model parameters is essential for variability-aware design. Based on 3D atomistic simulation results, this article evaluates the accuracy of statistical parameter generation for two industry-standard compact device models.

Statistical-Variability Compact-Modeling Strategies for BSIM4 and PSP

A novel graphene tunnelling field effect transistor (GTFET) using bandgap engineering

In this research an emerging field of power electronics in nanotechnology is survived. This application-based technology today is called Nano Power Electronics. It utilizes nano electronic transistors in switching applications in the range of nano power for signal shaping purposes. In recent years Single Electron Transistors are highly interested in nano electronic applications. They have got inherently fast tunneling rate, which makes them highly suitable for high-speed operation. Based on this fact, a novel nano DC/AC converter nano inverter is proposed with these transistors. Simulation of this integrated nano inverter with SPICE shows it has excellent output waveforms and it will be a good candidate for nano power electronic applications.

/pdf/a-novel-integrated-set-based-inverter-for-nano-power-461beaaon7.pdf

A Novel Integrated SET Based Inverter for Nano Power Electronic Applications

Comparative study of nanoribbon field effect transistors based on silicene and graphene

In this paper, a scheme of the germanene nanoribbon tunneling field effect transistor (GeNR-TFET) is proposed. The characteristics and analog performance of the device were theoretically investigated by exploiting the electrical properties of a germanene nanoribbon and applying the doping concentration in the source and drain regions at 300 K and 4 K temperatures. The device parameters were obtained using a non-equilibrium Green's function (NEGF) method within the tight binding (TB) Hamiltonian. The TB Hamiltonian was extracted from the density functional theory (DFT) through the Wannier function. We find that by increasing the doping concentration the I on current increases which leads to an improvement of the I on/I off ratio to 105. Moreover, decreasing the temperature from 300 K to 4 K causes the I off to become ten times smaller. We find that the device output characteristic displays a negative differential conductance with a good peak-to-valley ratio which is improved by increasing the doping concentration. The analog performance of the device is also investigated in the subthreshold regime of operation by varying the doping concentration. It is observed that by increasing the device doping concentration, the analog figures of merit can be improved.

http://iopscience.iop.org/article/10.1088/0268-1242/31/4/045009/pdf

Daryoosh Dideban

Papers

Statistical-Variability Compact-Modeling Strategies for BSIM4 and PSP

A novel graphene tunnelling field effect transistor (GTFET) using bandgap engineering

A Novel Integrated SET Based Inverter for Nano Power Electronic Applications

Comparative study of nanoribbon field effect transistors based on silicene and graphene

Germanene nanoribbon tunneling field effect transistor (GeNR-TFET) with a 10 nm channel length: analog performance, doping and temperature effects