There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality.

Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

I and i

Three parallel algorithms for classical molecular dynamics are presented. The first assigns each processor a fixed subset of atoms; the second assigns each a fixed subset of inter-atomic forces to compute; the third assigns each a fixed spatial region. The algorithms are suitable for molecular dynamics models which can be difficult to parallelize efficiently—those with short-range forces where the neighbors of each atom change rapidly. They can be implemented on any distributed-memory parallel machine which allows for message-passing of data between independently executing processors. The algorithms are tested on a standard Lennard-Jones benchmark problem for system sizes ranging from 500 to 100,000,000 atoms on several parallel supercomputers--the nCUBE 2, Intel iPSC/860 and Paragon, and Cray T3D. Comparing the results to the fastest reported vectorized Cray Y-MP and C90 algorithm shows that the current generation of parallel machines is competitive with conventional vector supercomputers even for small problems. For large problems, the spatial algorithm achieves parallel efficiencies of 90% and a 1840-node Intel Paragon performs up to 165 faster than a single Cray C9O processor. Trade-offs between the three algorithms and guidelines for adapting them to more complex molecular dynamics simulations are also discussed.

Fast parallel algorithms for short-range molecular dynamics

다중혈관 관상동맥 환자에서 y-문합을 이용하여 양쪽 내흉동맥만을 사용한 우회술의 조기 성적

抗原变异可使得多种致病微生物易于逃避宿主免疫应答。表达在感染红细胞表面的恶性疟原虫红细胞表面蛋白1（PfPMP1）与感染红细胞、内皮细胞、树突状细胞以及胎盘的单个或多个受体作用，在黏附及免疫逃避中起关键的作用。每个单倍体基因组var基因家族编码约60种成员，通过启动转录不同的var基因变异体为抗原变异提供了分子基础。

疟原虫var基因转换速率变化导致抗原变异[英]／Paul H, Robert P, Christodoulou Z, et al//Proc Natl Acad Sci U S A

Thermoelectric materials, which can generate electricity from waste heat or be used as solid-state Peltier coolers, could play an important role in a global sustainable energy solution. Such a development is contingent on identifying materials with higher thermoelectric efficiency than available at present, which is a challenge owing to the conflicting combination of material traits that are required. Nevertheless, because of modern synthesis and characterization techniques, particularly for nanoscale materials, a new era of complex thermoelectric materials is approaching. We review recent advances in the field, highlighting the strategies used to improve the thermopower and reduce the thermal conductivity.

/pdf/complex-thermoelectric-materials-59e25n2qme.pdf

Complex thermoelectric materials.

Bismuth telluride-based thin films have been investigated as the active material in flexible and micro thermoelectric generators (TEGs) for near room-temperature energy harvesting applications. The latter is a class of compact printed circuit board compatible devices conceptualized for operation at low-temperature gradients to generate power for wireless sensor nodes (WSNs), the fundamental units of the Internet-of-Things (IoT). CMOS and MEMS compatible micro-TEGs require thin films that can be integrated into the fabrication flow without compromising their thermoelectric properties. We present results on the thermoelectric properties of (Bi,Sb)2(Se,Te)3 thin films deposited via thermal evaporation of ternary compound pellets on four-inch SiO2 substrates at room temperature. Thin-film compositions and post-deposition annealing parameters are optimized to achieve power factors of 2.75 mW m−1 K−2 and 0.59 mW m−1 K−2 for p-type and n-type thin films. The measurement setup is optimized to characterize the thin-film properties accurately. Thin-film adhesion is further tested and optimized on several substrates. Successful lift-off of p-type and n-type thin films is completed on the same wafer to create thermocouple patterns as per the target device design proving compatibility with the standard MEMS fabrication process.

/pdf/development-of-mems-process-compatible-bi-sb-2-se-te-3-based-1ndxzoi0.pdf

Development of MEMS Process Compatible (Bi,Sb)2(Se,Te)3-Based Thin Films for Scalable Fabrication of Planar Micro-Thermoelectric Generators

/pdf/erratum-to-the-effect-of-multivalley-bandstructureon-rqtfqsjv2i.pdf

Erratum to: The Effect of Multivalley Bandstructureon Thermoelectric Properties of AlxGa1−xAs

In this study, we investigate the enhancement of exchange bias in core/shell/shell structures by synthesizing single inverted core/shell (Co-oxide/Co) and core/shell/shell (Co-oxide/Co/Co-oxide) nanostructures through a two-step reduction and oxidation method. We evaluate the magnetic properties of the structures and study the effect of shell thickness on the exchange bias by synthesizing various shell thicknesses of Co-oxide/Co/Co-oxide nanostructures. The extra exchange coupling formed at the shell–shell interface in the core/shell/shell structure leads to a remarkable increase in the coercivity and the strength of the exchange bias by three and four orders, respectively. The strongest exchange bias is achieved for the sample comprising the thinnest outer Co-oxide shell. Despite the general declining trend of the exchange bias with Co-oxide shell thickness, we also observe a nonmonotonic behavior in which the exchange bias oscillates slightly as the shell thickness increases. This phenomenon is ascribed to the dependence of the antiferromagnetic outer shell thickness variation at the expense of the simultaneous opposite variation in the ferromagnetic inner shell.

/pdf/exploring-the-enhancement-of-exchange-bias-in-innovative-1eb4w9go.pdf

Exploring the Enhancement of Exchange Bias in Innovative Core/Shell/Shell Structures: Synthesis and Magnetic Properties of Co-Oxide/Co and Co-Oxide/Co/Co-Oxide Inverted Nanostructures

/pdf/development-of-thermoelectric-devices-for-structural-1rc3mmzl17.pdf

Development of thermoelectric devices for structural composites

Various examples of thin film thermoelectric (TE) devices, their fabrication and applications are presented. In one example, a thin film TE device includes a first substrate including a void; a p-type TE element attached to the first substrate at a first end and extending over the void to a second end; an n-type TE element attached to the first substrate at a first end and extending over the void to a second end adjacent to the second end of the p-type TE element; and an interconnection coupling the second ends of the p-type TE element and the n-type TE element. In some examples, TE device layers can be vacuum sealed between a supporting substrate and a transparent substrate. A thermal spreader can include TE modules having a distribution of TE elements that operate in generating or cooling modes to cool IC or device hotspots using self-generated power.

Daryoosh Vashaee

Papers

Development of MEMS Process Compatible (Bi,Sb)2(Se,Te)3-Based Thin Films for Scalable Fabrication of Planar Micro-Thermoelectric Generators

Erratum to: The Effect of Multivalley Bandstructureon Thermoelectric Properties of AlxGa1−xAs

Exploring the Enhancement of Exchange Bias in Innovative Core/Shell/Shell Structures: Synthesis and Magnetic Properties of Co-Oxide/Co and Co-Oxide/Co/Co-Oxide Inverted Nanostructures

Development of thermoelectric devices for structural composites

Thin film thermoelectric devices