David J. Thomson

TL;DR: In this paper, a concept for self-aligned formation of the p-n junction which is flexible in the capability to produce a number of device configurations is presented, and experimental results from devices which are formed through such processes are presented with operation up to and beyond 40 Gbit/s.

TL;DR: A novel high speed silicon optical modulator which has self-aligned pn junction formation is introduced and shown to be attractive for reducing performance variations and increasing yield.

TL;DR: An optical comb of highly uniform in power frequency lines (variation less than 0.7 dB) using a silicon ring resonator modulator is reported on, indicating optimum operation at a small forward-bias voltage.

TL;DR: In this paper, the authors present a device-level method for characterization of photonic chips based on a highly localized modulation in the device using pulsed laser excitation, and demonstrate the versatility of this all-optical modulation technique in imaging and in quantitative characterization of a variety of properties of silicon photonic devices.

TL;DR: It is shown that the effectiveness of the plasma dispersion effect is dramatically increased in this wavelength window as compared to the traditional telecommunications wavelengths of 1.3μm and 1.55μm.