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Dengkui Wang
Researcher at Changchun University of Science and Technology
Publications - 88
Citations - 826
Dengkui Wang is an academic researcher from Changchun University of Science and Technology. The author has contributed to research in topics: Nanowire & Photoluminescence. The author has an hindex of 10, co-authored 74 publications receiving 467 citations.
Papers
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Enhanced Photoresponsivity of a GaAs Nanowire Metal-Semiconductor-Metal Photodetector by Adjusting the Fermi Level.
Xue Chen,Dengkui Wang,Tuo Wang,Zhenyu Yang,Xuming Zou,Peng Wang,Wenjin Luo,Qing Li,Lei Liao,Lei Liao,Weida Hu,Zhipeng Wei +11 more
TL;DR: The eloquent evidences clearly prove that doping-adjusting the Fermi level has great potential applications in high-performance GaAs nanowire photodetectors and other functional photodETectors.
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Enhancing Performance of a GaAs/AlGaAs/GaAs Nanowire Photodetector Based on the Two-Dimensional Electron–Hole Tube Structure
Xiaotian Zhu,Fengyuan Lin,Zhihong Zhang,Xue Chen,Hao Huang,Dengkui Wang,Jilong Tang,Xuan Fang,Dan Fang,Johnny C. Ho,Lei Liao,Zhipeng Wei +11 more
TL;DR: An axially asymmetric GaAs/AlGaAs/GaAs (G/A/G) nanowire (NW) photodetector that operates efficiently at room temperature based on the Ⅰ-type band structure that can realize a two-dimensional electron-hole tube (2DEHT) structure for the substantial performance enhancement.
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Analysis of the influence and mechanism of sulfur passivation on the dark current of a single GaAs nanowire photodetector.
Xue Chen,Ning Xia,Zhenyu Yang,Fan Gong,Zhipeng Wei,Dengkui Wang,Jilong Tang,Xuan Fang,Dan Fang,Lei Liao +9 more
TL;DR: The influence and mechanism of sulfur surface passivation on the dark current of a single GaAs nanowire photodetector have been studied and it is confirmed that the origin of the reduction of dark current is the decrease in the surface state density.
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Photoresponse improvement of mixed-dimensional 1D–2D GaAs photodetectors by incorporating constructive interface states
Dengkui Wang,Xue Chen,Xuan Fang,Jilong Tang,Fengyuan Lin,Xinwei Wang,Guanlin Liu,Lei Liao,Johnny C. Ho,Zhipeng Wei +9 more
TL;DR: In this paper, a mixed-dimensional GaAs photodetector was developed by utilizing 1D GaAs nanowires (NWs) and 2D GAs non-layered sheets (2DNLSs) as active device materials.
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Ultraviolet Electroluminescence from ZnS@ZnO Core-Shell Nanowires/p-GaN Introduced by Exciton Localization.
Xuan Fang,Zhipeng Wei,Yahui Yang,Rui Chen,Yongfeng Li,Jilong Tang,Dan Fang,Huimin Jia,Dengkui Wang,Jie Fan,Xiaohui Ma,Bin Yao,Xiaohua Wang +12 more
TL;DR: The results indicated that utilizing localized excitons should be a new route toward ZnO-based ultraviolet LEDs with high efficiency.