D
Denis V. Fateev
Researcher at Russian Academy of Sciences
Publications - 56
Citations - 939
Denis V. Fateev is an academic researcher from Russian Academy of Sciences. The author has contributed to research in topics: Terahertz radiation & Plasmon. The author has an hindex of 15, co-authored 51 publications receiving 791 citations. Previous affiliations of Denis V. Fateev include Saratov State University.
Papers
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Journal ArticleDOI
Plasmonic terahertz detection by a double-grating-gate field-effect transistor structure with an asymmetric unit cell
Vyacheslav V. Popov,Denis V. Fateev,Taiichi Otsuji,Yahya Moubarak Meziani,D. Coquillat,Wojciech Knap +5 more
TL;DR: In this paper, a double-grating gate field effect transistor structure with an asymmetric unit cell was proposed for plasmonic terahertz detection with a photovoltaic response mode.
Journal ArticleDOI
Plasmonic terahertz detection by a double-grating-gate field-effect transistor structure with an asymmetric unit cell
Vyacheslav V. Popov,Denis V. Fateev,Taiichi Otsuji,Yahya Moubarak Meziani,D. Coquillat,Wojciech Knap +5 more
TL;DR: In this article, a double-grating gate field effect transistor structure with an asymmetric unit cell was proposed for plasmonic terahertz detection with a photovoltaic response mode.
Journal ArticleDOI
Terahertz ratchet effects in graphene with a lateral superlattice
Peter Olbrich,Josef Kamann,Matthias König,Jakob Munzert,Leonard Tutsch,Jonathan Eroms,Dieter Weiss,Ming-Hao Liu,Leonid Golub,Eougenious Ivchenko,Vyacheslav V. Popov,Vyacheslav V. Popov,Denis V. Fateev,K. V. Mashinsky,Felix Fromm,Thomas Seyller,Sergey Ganichev +16 more
TL;DR: In this paper, experimental and theoretical studies on ratchet effects in graphene with a lateral superlattice excited by alternating electric fields of terahertz frequency range are presented, including the Seebeck thermoratchet effect as well as the effects of "linear" and "circular" ratchets, sensitive to the corresponding polarization of the driving electromagnetic force.
Journal ArticleDOI
Ultrahigh sensitive plasmonic terahertz detector based on an asymmetric dual-grating gate HEMT structure
Takayuki Watanabe,Stephane Boubanga Tombet,Yudai Tanimoto,Yuye Wang,Hiroaki Minamide,Hiromasa Ito,Denis V. Fateev,V. V. Popov,D. Coquillat,Wojciech Knap,Yahya Moubarak Meziani,Taiichi Otsuji +11 more
TL;DR: In this paper, the authors report on ultrahigh sensitive, broadband terahertz (THz) detectors based on asymmetric dual-grating-gate (A-DGG) high electron mobility transistors, demonstrating a record responsivity of 2.2 kV/W at 1.2 THz with a superior low noise equivalent power of 15 pW/√Hz using InGaAs/InAlAs/INP material systems.
Journal ArticleDOI
InP- and GaAs-Based Plasmonic High-Electron-Mobility Transistors for Room-Temperature Ultrahigh-Sensitive Terahertz Sensing and Imaging
Takayuki Watanabe,S. Boubanga-Tombet,Yudai Tanimoto,Denis V. Fateev,Vyacheslav V. Popov,Dominique Coquillat,Wojciech Knap,Yahya Moubarak Meziani,Yuye Wang,Hiroaki Minamide,H. Ito,Taiichi Otsuji +11 more
TL;DR: In this paper, the design and performance of InP and GaAs-based plasmonic high-electron-mobility transistors (HEMTs) for ultra-sensitive terahertz (THz) sensing and imaging is reviewed.