Didier Celi

TL;DR: In this paper, the first 55 nm SiGe BiCMOS technology developed on a 300 mm wafer line in STMicroelectronics is presented, which features Low Power (LP) and General Purpose (GP) CMOS devices and 0.45 µm2 6T-SRAM bit cell.

TL;DR: In this article, a double-polysilicon FSA-SEG SiGe:C HBT with a record peak f MAX of 423 GHz (f T = 273 GHz) is demonstrated.

TL;DR: In this article, a 230 GHz self-aligned SiGeC heterojunction bipolar transistor developed for a 90-nm BiCMOS technology is described and the technical choices such as the selective epitaxial growth of the base and the use of an arsenic-doped monocrystalline emitter are presented.

TL;DR: In this article, the authors summarized the technological developments carried out in STMicroelectronics to raise the fT / fMAX of SiGe HBTs up to ~ 300 GHz / 400 GHz.

TL;DR: In this article, a methodology for extracting and verifying the high-frequency model parameters of the HICUM L0 and L2 models of a silicon-germanium HBT from device and circuit measurements in the 110-325 GHz range is described.