I. Telliez

TL;DR: In this article, a 230 GHz self-aligned SiGeC heterojunction bipolar transistor developed for a 90-nm BiCMOS technology is described and the technical choices such as the selective epitaxial growth of the base and the use of an arsenic-doped monocrystalline emitter are presented.

TL;DR: In this article, the microwave and noise performance of SiGe heterojunction bipolar transistors (HBTs) has been characterized when cooling down the temperature, and it was found that SiGe HBTs exhibit a maximum oscillation frequency f/sub max/ of about 292 GHz at 78 K, which represents an increase of about 30% with the value measured at room temperature.

TL;DR: The different functions needed to realize the transmitter (oscillator, switch and amplifier) and its performance achieved with the BiCMOS process are described and a ON/OFF transmission ratio about 40 dB at 60 GHz is presented.

TL;DR: In this article, a low area, low consumption, low noise amplifier (LNA) for 40 GHz wireless communications in SiGe:C BiCMOS technology is presented. But the two stage LNA was achieved using a simple approach due to the microstrip line characteristics and exhibits a gain of 23 dB and 3.7 dB noise figure at 40 GHz for a total DC power consumption less than 20 mW.

TL;DR: In this paper, a superheterodyne down-converter realized using SiGe:C BiCMOS HBT is presented, which exhibits conversion gain of 13 dB and NF/sub DSB/ of 7 dB, and the associated oscillator performs phase noise of -90 dBc/Hz at 1 MHz from the 40 GHz carrier frequency.