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Daniel Gloria
Researcher at STMicroelectronics
Publications - 287
Citations - 3457
Daniel Gloria is an academic researcher from STMicroelectronics. The author has contributed to research in topics: CMOS & BiCMOS. The author has an hindex of 27, co-authored 280 publications receiving 3174 citations.
Papers
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Journal ArticleDOI
30-100-GHz inductors and transformers for millimeter-wave (Bi)CMOS integrated circuits
TL;DR: In this paper, planar and three-dimensional inductors and transformers were designed and characterized on-wafer up to 100 GHz, and the first time that spiral structures are suitable for applications such as 60-GHz wireless local area network and 77-GHz automotive RADAR.
Proceedings ArticleDOI
A 55 nm triple gate oxide 9 metal layers SiGe BiCMOS technology featuring 320 GHz f T / 370 GHz f MAX HBT and high-Q millimeter-wave passives
Pascal Chevalier,G. Avenier,G. Ribes,A. Montagne,E. Canderle,Didier Celi,N. Derrier,C. Deglise,Cedric Durand,Thomas Quemerais,M. Buczko,Daniel Gloria,O. Robin,Sébastien Petitdidier,Y. Campidelli,F. Abbate,Mickael Gros-Jean,L. Berthier,Jean-Damien Chapon,Francois Leverd,C. Jenny,C. Richard,Olivier Gourhant,C. De-Buttet,Remi Beneyton,Patrick Maury,S. Joblot,Laurent Favennec,M. Guillermet,P. Brun,K. Courouble,K. Haxaire,G. Imbert,E. Gourvest,J. Cossalter,O. Saxod,Clement Tavernier,F. Foussadier,B. Ramadout,R. Bianchini,C. Julien,D. Ney,Julien Rosa,Sebastien Haendler,Y. Carminati,B. Borot +45 more
TL;DR: In this paper, the first 55 nm SiGe BiCMOS technology developed on a 300 mm wafer line in STMicroelectronics is presented, which features Low Power (LP) and General Purpose (GP) CMOS devices and 0.45 µm2 6T-SRAM bit cell.
Journal ArticleDOI
0.13 $\mu$ m SiGe BiCMOS Technology Fully Dedicated to mm-Wave Applications
G. Avenier,Malick Diop,Pascal Chevalier,G. Troillard,Nicolas Loubet,J. Bouvier,L. Depoyan,N. Derrier,M. Buczko,C. Leyris,S. Boret,S. Montusclat,A. Margain,S. Pruvost,S.T. Nicolson,K.H.K. Yau,Nathalie Revil,Daniel Gloria,Didier Dutartre,Sorin P. Voinigescu,Alain Chantre +20 more
TL;DR: This paper presents a complete 0.13 μm SiGe BiCMOS technology fully dedicated to millimeter-wave applications, including a high-speed (230/280 GHz fT/fMAX) and medium voltage SiGe HBT, thick-copper back-end designed for high performance transmission lines and inductors, 2 fF/μm2 high-linearity MIM capacitor and complementary double gate oxide MOS transistors.
Journal ArticleDOI
High-Performance Shielded Coplanar Waveguides for the Design of CMOS 60-GHz Bandpass Filters
TL;DR: In this paper, the authors presented optimized very high performance CMOS slow-wave shielded CPW transmission lines (S-CPW TLines), which were used to realize a 60 GHz bandpass filter, with T-junctions and open stubs.
Proceedings ArticleDOI
A multi-wavelength 3D-compatible silicon photonics platform on 300mm SOI wafers for 25Gb/s applications
Frederic Boeuf,Sebastien Cremer,Nathalie Vulliet,Thierry Pinguet,Attila Mekis,Gianlorenzo Masini,Lieven Verslegers,Peng Sun,Ali Ayazi,N-K Hon,Subal Sahni,Y. Chi,B. Orlando,D. Ristoiu,Alexis Farcy,Francois Leverd,Lucile Broussous,D. Pelissier-Tanon,C. Richard,L. Pinzelli,Remi Beneyton,Olivier Gourhant,E. Gourvest,Y. Le-Friec,D. Monnier,P. Brun,M. Guillermet,D. Benoit,K. Haxaire,Jean-Robert Manouvrier,Sébastien Jan,H. Petiton,J.F. Carpentier,T. Quemerais,Cedric Durand,Daniel Gloria,M. Fourel,F. Battegay,Yannick Sanchez,E. Batail,F. Baron,Philippe Delpech,L. Salager,P. De Dobbelaere,B. Sautreuil +44 more
TL;DR: In this paper, the authors describe a 300mm Silicon Photonics platform designed for 25Gb/s and above applications at the three typical communication wavelengths and compatible with 3D integration.