D
Dimitrios Papadimitriou
Researcher at Aristotle University of Thessaloniki
Publications - 73
Citations - 1257
Dimitrios Papadimitriou is an academic researcher from Aristotle University of Thessaloniki. The author has contributed to research in topics: Raman spectroscopy & Silicon. The author has an hindex of 19, co-authored 72 publications receiving 1202 citations. Previous affiliations of Dimitrios Papadimitriou include University of Milan & National Technical University of Athens.
Papers
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Journal ArticleDOI
Stem cell therapy in stroke.
Franco Locatelli,Anna Bersano,E. Ballabio,Silvia Lanfranconi,Dimitrios Papadimitriou,Sandra Strazzer,Nereo Bresolin,Giacomo P. Comi,Stefania Corti +8 more
TL;DR: Initial human studies indicate that stem cell therapy may be technically feasible in stroke patients, however, issues still need to be addressed for use in human subjects.
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Electroluminescent device based on silicon nanopillars
TL;DR: In this paper, the authors fabricated silicon nanopillars by using deep UV lithography, highly anisotropic silicon reactive ion etching based on fluorine chemistry, and high-temperature thermal oxidation for further thinning.
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Sub-micrometre luminescent porous silicon structures using lithographically patterned substrates
A. G. Nassiopoulos,S. Grigoropoulos,L. Canham,A. Halimaoui,Isabelle Berbezier,Evangelos Gogolides,Dimitrios Papadimitriou +6 more
TL;DR: In this article, a patterned surface of crystalline p-type silicon was fabricated by anodization of patterned surfaces of silicon dioxide and silicon nitride, which exhibited strong red luminescence under UV excitation.
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Visible luminescence from one‐ and two‐dimensional silicon structures produced by conventional lithographic and reactive ion etching techniques
TL;DR: In this article, the luminescence from silicon nanostructures fabricated by using conventional lithographic and reactive ion etching techniques and final thinning by high temperature thermal oxidation was obtained at room temperature under 488 nm argon laser excitation.
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Depth dependence of stress and porosity in porous silicon: a micro-Raman study
TL;DR: In this article, the elastic strain of porous silicon membranes for potential use in the microsensor technology has been investigated by means of micro-Raman spectroscopy, where a depth distribution of the stress normal-to-the plane of formation has been measured with maximal stress value at the interface between the porous layer and the crystalline Si-substrate.