D
Donguk Lee
Researcher at Pohang University of Science and Technology
Publications - 12
Citations - 168
Donguk Lee is an academic researcher from Pohang University of Science and Technology. The author has contributed to research in topics: Voltage & Threshold voltage. The author has an hindex of 5, co-authored 7 publications receiving 79 citations.
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Journal ArticleDOI
Various Threshold Switching Devices for Integrate and Fire Neuron Applications
Donguk Lee,Myonghoon Kwak,Kibong Moon,Wooseok Choi,Jaehyuk Park,Jongmyung Yoo,Jeonghwan Song,Seokjae Lim,Changhyuck Sung,Writam Banerjee,Hyunsang Hwang +10 more
TL;DR: This study demonstrates an integrate and fire (I&F) neuron using threshold switching (TS) devices to implement spike‐based neuromorphic system and indicates applicability of TS‐based I&F neuron in neuromorphic hardware application.
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Steep Slope Field-Effect Transistors With B–Te-Based Ovonic Threshold Switch Device
TL;DR: In this article, a new ovonic threshold switch (OTS) device based on simple binary Boron-Tellurium (B-Te) film is developed and implemented in series with the source region of a transistor.
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NbO 2 -Based Frequency Storable Coupled Oscillators for Associative Memory Application
Donguk Lee,Euijun Cha,Jaehyuk Park,Changhyuck Sung,Kibong Moon,Solomon Amsalu Chekol,Hyunsang Hwang +6 more
TL;DR: In this article, a frequency storable oscillator using nanoscale two-terminal NbO2 insulator-metal transition devices along with TaOx-based resistive switching memory (RRAM) devices is demonstrated.
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Investigation of $I-V$ Linearity in TaO x -Based RRAM Devices for Neuromorphic Applications
Changhyuck Sung,Andrea Padovani,Bastien Beltrando,Donguk Lee,Myunghoon Kwak,Seokjae Lim,Luca Larcher,Vincenzo Della Marca,Hyunsang Hwang +8 more
TL;DR: In this article, the authors investigate the origin of currentvoltage linearity of TaO x -based resistive switching memory (RRAM) devices for their possible application as electronic synapses.
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WO x -Based Synapse Device With Excellent Conductance Uniformity for Hardware Neural Networks
TL;DR: This work proposes a highly reliable 2-terminal SD with fixed resistance based on WOx films that can form nanoscale WO×-based SDs with excellent conductance uniformity and I-V linearity and shows the potential of WOx-basedSD for future large-scale HNN applications.