E
E. Muñoz
Researcher at Technical University of Madrid
Publications - 265
Citations - 6072
E. Muñoz is an academic researcher from Technical University of Madrid. The author has contributed to research in topics: Molecular beam epitaxy & Quantum well. The author has an hindex of 37, co-authored 254 publications receiving 5789 citations. Previous affiliations of E. Muñoz include ETSI & Polytechnic University of Puerto Rico.
Papers
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Influence of lateral and in-depth metal segregation on the patterning of ohmic contacts for GaN-based devices
Andrés Redondo-Cubero,Andrés Redondo-Cubero,Luis Vázquez,Luís Alves,Victoria Corregidor,M. F. Romero,A Pantellini,C Lanzieri,E. Muñoz +8 more
TL;DR: In this article, the lateral and in-depth metal segregation of Au/Ni/Al/Ti contacts for GaN-based high electron mobility transistors were analyzed as a function of the Al barrier's thickness.
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A Controllable and Highly Propagative Hybrid Surface Plasmon-Phonon Polariton in a CdZnO-based Two-Interface System
Julen Tamayo-Arriola,E. Martínez Castellano,Miguel Montes Bajo,Adelaida Huerta-Barberà,E. Muñoz,Vicente Muñoz-Sanjosé,Adrian Hierro +6 more
TL;DR: In this paper, the authors explore the CdZnO alloy as a plasmonic material, with a tunable plasma frequency and reduced losses compared to pure CdO.
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High Resolution X-ray Diffraction Characterization of [111]B Oriented InGaAs/GaAs Mqw Structures
A. Sanz-Hervás,A. Sacedón,Evaristo J. Abril,José Luis Sánchez-Rojas,C. Villar,G. De Benito,M. Aguilar,Miguel López,E. Calleja,E. Muñoz +9 more
TL;DR: In this paper, high-resolution X-ray diffractometry was applied to the study of InGaAs/GaAs multiple quantum well structures on (001) and (lll)B GaAs substrates.
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Optical and electrical characterization of GaN layers grown on silicon and sapphire substrates
Miguel Sanchez-Garcia,F. J. Sánchez,Fernando Calle,E. Muñoz,E. Calleja,K. S. Stevens,M. Kinniburgh,Roderic Beresford,Bernard Beaumont,Pierre Gibart +9 more
TL;DR: In this article, structural, optical and electrical properties of GaN layers grown by two epitaxial techniques (ECR-MBE and MOCVD) using different substrates (vicinal Si-111 and sapphire) has been performed.
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Deep level transient spectroscopy assessment of Silicon contamination in AlGaAs layers grown by metalorganic vapor phase epitaxy
TL;DR: In this paper, a systematic silicon contamination has been detected by deep level transient spectroscopy in undoped and n-type doped (Te, Se, Sn) AlGaAs layers, grown in two different metalorganic vapor phase epitaxy reactors.