scispace - formally typeset
E

E. Muñoz

Researcher at Technical University of Madrid

Publications -  265
Citations -  6072

E. Muñoz is an academic researcher from Technical University of Madrid. The author has contributed to research in topics: Molecular beam epitaxy & Quantum well. The author has an hindex of 37, co-authored 254 publications receiving 5789 citations. Previous affiliations of E. Muñoz include ETSI & Polytechnic University of Puerto Rico.

Papers
More filters
Journal ArticleDOI

Sublattice-specific ordering of ZnO layers during the heteroepitaxial growth at different temperatures

TL;DR: In this article, the effect of substrate temperature on the sublattice ordering in ZnO layers grown by reactive pulsed magnetron sputtering on sapphire has been investigated by different techniques.
Journal ArticleDOI

Study of the Effects of Mg and Be Co‐Doping in GaN Layers

TL;DR: In this paper, a study of the effects of co-doping was performed on the photoluminescence spectra of Mg/AlGaN single heterostructures in comparison with the Be-doped ones.
Journal ArticleDOI

Role of ionized nitrogen species in the optical and structural properties of GaInNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy

TL;DR: In this article, the impact of the nitrogen ion density on the structural and optical properties of GaInNAs quantum wells (QWs) grown by molecular beam epitaxy was reported. And the results provided clear evidence that the density of nitrogen ions present in the chamber during the epitaxial growth of QWs directly limits both the structural properties.
Journal ArticleDOI

Plasma diagnostics and device properties of AlGaN/GaN HEMT passivated with SiN deposited by plasma-enhanced chemical vapour deposition

TL;DR: In this article, the dissociation rates of SiH4 and NH3 precursors and the formation of H2 and N2 have been analyzed by mass spectrometry as a function of the NH3/SiH4 flow ratio and the RF power applied to the plasma reactor.
Journal ArticleDOI

VIS-UV ZnCdO/ZnO multiple quantum well nanowires and the quantification of Cd diffusion.

TL;DR: A nanometric analysis of the Cd profile along the heterostructures shows the presence of Cd diffusion from the ZnCdO well to theZnO barrier, and this phenomenon modifies the band structure and the optical properties of theheterostructure, and is considered in order to correctly identify quantum effects in the ZsNcdO/znO MQWs.