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Eleazar Walter Kenyon
Researcher at Texas Instruments
Publications - 11
Citations - 131
Eleazar Walter Kenyon is an academic researcher from Texas Instruments. The author has contributed to research in topics: BiCMOS & Shallow trench isolation. The author has an hindex of 6, co-authored 11 publications receiving 122 citations. Previous affiliations of Eleazar Walter Kenyon include Georgia Institute of Technology.
Papers
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Journal ArticleDOI
An 8–16 GHz SiGe Low Noise Amplifier With Performance Tuning Capability for Mitigation of Radiation-Induced Performance Loss
Duane C. Howard,Prabir Saha,Subramaniam Shankar,R.M. Diestelhorst,Troy D. England,Nelson E. Lourenco,Eleazar Walter Kenyon,John D. Cressler +7 more
TL;DR: In this article, a wideband, low noise amplifier (LNA) implemented in a Silicon-Germanium Heterojunction Bipolar Transistor (SiGe HBT) technology is presented.
Journal ArticleDOI
A new approach to designing electronic systems for operation in extreme environments: Part II - The SiGe remote electronics unit
Troy D. England,R.M. Diestelhorst,Eleazar Walter Kenyon,John D. Cressler,V. Ramachandran,Michael L. Alles,Robert A. Reed,Richard W. Berger,R. Garbos,Benjamin J. Blalock,Alan Mantooth,M. Barlow,Fa Foster Dai,Wayne Johnson,Charles D. Ellis,Jim Holmes,C. Webber,Patrick McCluskey,M. Mojarradi,L. Peltz,R. Frampton,C. Eckert +21 more
TL;DR: In this paper, the authors presented the architecture, simulation, packaging, and over-temperature and radiation testing of a complex, 16-channel, extreme environment capable, SiGe Remote Electronics Unit containing the Remote Sensor Interface ASIC that can serve a wide variety of space-relevant needs as designed.
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Advanced SiGe BiCMOS Technology for Multi-Mrad Electronic Systems
Zachary E. Fleetwood,Eleazar Walter Kenyon,Nelson E. Lourenco,Shaleen Jain,En Xia Zhang,Troy D. England,John D. Cressler,Ronald D. Schrimpf,Daniel M. Fleetwood +8 more
TL;DR: It is concluded that this SiGe process technology is a potential candidate for implementing reliable and survivable multi-Mrad total ionizing dose-hard electronic systems.
Journal ArticleDOI
X-ray radiation effects in multilayer epitaxial graphene
Jeremy Hicks,Rajan Arora,Eleazar Walter Kenyon,Partha S. Chakraborty,Holly N. Tinkey,John Hankinson,Claire Berger,Walt A. de Heer,Edward H. Conrad,John D. Cressler +9 more
TL;DR: In this article, the authors characterize multilayer graphene grown on C-face SiC before and after exposure to a total ionizing dose of 12 Mrad(SiO2) using a 10 keV x-ray source.
Journal ArticleDOI
Establishing best-practice modeling approaches for understanding single-event transients in Gb/s SiGe digital logic
TL;DR: In this paper, single-event transient (SET) simulations of a Gb/s SiGe BiCMOS master/slave D flip-flop circuit are performed, employing both a decoupled current-injection SET modeling technique and a fully-coupled mixed-mode TCAD technique to model heavy-ion strikes to the storage and input cells.