E
Emiliano Bonera
Researcher at University of Milan
Publications - 69
Citations - 1197
Emiliano Bonera is an academic researcher from University of Milan. The author has contributed to research in topics: Raman spectroscopy & Silicon. The author has an hindex of 20, co-authored 63 publications receiving 1109 citations. Previous affiliations of Emiliano Bonera include University of Leeds & Olivetti.
Papers
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Journal ArticleDOI
Atomic-layer deposition of Lu2O3
Giovanna Scarel,Emiliano Bonera,Claudia Wiemer,G. Tallarida,Sabina Spiga,Marco Fanciulli,Igor L. Fedushkin,H. Schumann,Yu. Yu. Lebedinskii,Andrei Zenkevich +9 more
TL;DR: In this article, the growth by atomic-layer deposition of lutetium oxide films using the dimeric {[C5H4(SiMe3)]2LuCl}2 complex, which has been synthesized for this purpose, and H2O was reported.
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Combining high resolution and tensorial analysis in Raman stress measurements of silicon
TL;DR: In this article, a Raman spectroscopy technique for the measurement of the tensorial nature of stress in silicon on a micrometric scale is presented. But this method is not suitable for the description of the stress tensor in shallow trench isolations for microelectronics.
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Raman spectroscopy determination of composition and strain in Si1-xGex/Si heterostructures
Fabio Pezzoli,Emiliano Bonera,Emanuele Grilli,Mario Guzzi,Stefano Sanguinetti,Daniel Chrastina,Giovanni Isella,H. von Känel,E. Wintersberger,J. Stangl,G. Bauer +10 more
TL;DR: In this paper, a procedure for the quantitative measurement of composition and strain in epitaxial Si 1 - x Ge x / Si heterostructures by means of Raman spectroscopy for any Ge concentration is presented.
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Solid-State Dewetting Dynamics of Amorphous Ge Thin Films on Silicon Dioxide Substrates.
Dimosthenis Toliopoulos,Alexey V. Fedorov,Sergio Bietti,Monica Bollani,Emiliano Bonera,Andrea Ballabio,Giovanni Isella,Mohammed Bouabdellaoui,Marco Abbarchi,Shiro Tsukamoto,Stefano Sanguinetti +10 more
TL;DR: These characterizations show that the amorphous Ge films dewet into Ge crystalline nano-islands with dynamics dominated by crystallization of theAmorphous material into crystalline Nano-seeds and material transport at Ge islands.
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Phonon strain shift coefficients in Si1−xGex alloys
Fabio Pezzoli,Emiliano Bonera,Emanuele Grilli,Mario Guzzi,Stefano Sanguinetti,D. Chrastina,Giovanni Isella,H. von Känel,E. Wintersberger,J. Stangl,G. Bauer +10 more
TL;DR: In this paper, a comprehensive study of the biaxial strain-induced shift of the Si1−xGex Raman active phonon modes is presented, which decouple and quantify separately the effect of strain and composition on the phonon frequencies.