F
Fabio Pezzoli
Researcher at University of Milan
Publications - 73
Citations - 1456
Fabio Pezzoli is an academic researcher from University of Milan. The author has contributed to research in topics: Photoluminescence & Electron. The author has an hindex of 21, co-authored 67 publications receiving 1306 citations. Previous affiliations of Fabio Pezzoli include University of Milano-Bicocca & Leibniz Institute for Solid State and Materials Research.
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Journal ArticleDOI
Precise control of thermal conductivity at the nanoscale through individual phonon-scattering barriers
Gilles Pernot,Mathieu Stoffel,Ivana Savic,Fabio Pezzoli,Peixuan Chen,Guillaume Savelli,A. Jacquot,Joachim Schumann,U. Denker,Ingolf Mönch,Ch. Deneke,Oliver G. Schmidt,Jean-Michel Rampnoux,Shidong Wang,M. Plissonnier,Armando Rastelli,Stefan Dilhaire,Natalio Mingo +17 more
TL;DR: By engineering a set of individual phonon-scattering nanodot barriers, this work accurately tailored the thermal conductivity of a single-crystalline SiGe material in spatially defined regions as short as approximately 15 nm, resulting in a room-temperature kappa well below the amorphous limit.
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Optical spin injection and spin lifetime in Ge heterostructures
Fabio Pezzoli,Federico Bottegoni,Dhara Trivedi,Franco Ciccacci,Anna Giorgioni,Pengki Li,Stefano Cecchi,Emanuele Grilli,Yang Song,Mario Guzzi,Hanan Dery,Giovanni Isella +11 more
TL;DR: In this article, the authors studied spin properties of Ge heterostructures by optical orientation and Hanle measurements and showed that the spin lifetime of electrons exceeds 1.5 ns below 150 K, whereas it is in the 500 ps range for holes.
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Raman spectroscopy determination of composition and strain in Si1-xGex/Si heterostructures
Fabio Pezzoli,Emiliano Bonera,Emanuele Grilli,Mario Guzzi,Stefano Sanguinetti,Daniel Chrastina,Giovanni Isella,H. von Känel,E. Wintersberger,J. Stangl,G. Bauer +10 more
TL;DR: In this paper, a procedure for the quantitative measurement of composition and strain in epitaxial Si 1 - x Ge x / Si heterostructures by means of Raman spectroscopy for any Ge concentration is presented.
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Phonon strain shift coefficients in Si1−xGex alloys
Fabio Pezzoli,Emiliano Bonera,Emanuele Grilli,Mario Guzzi,Stefano Sanguinetti,D. Chrastina,Giovanni Isella,H. von Känel,E. Wintersberger,J. Stangl,G. Bauer +10 more
TL;DR: In this paper, a comprehensive study of the biaxial strain-induced shift of the Si1−xGex Raman active phonon modes is presented, which decouple and quantify separately the effect of strain and composition on the phonon frequencies.
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Towards a uniform and large-scale deposition of MoS2 nanosheets via sulfurization of ultra-thin Mo-based solid films.
S. Vangelista,Eugenio Cinquanta,Christian Martella,M. Alia,Massimo Longo,Alessio Lamperti,R. Mantovan,Francesco Basso Basset,Fabio Pezzoli,Alessandro Molle +9 more
TL;DR: The detailed study of the heterogeneous vapor-solid reaction between a pre-deposited molybdenum solid film and sulfur vapor is reported, thus resulting in a controlled growth of MoS2 films onto SiO2/Si substrates with a tunable thickness and cm(2)-scale uniformity.