Showing papers by "Emmanuel Dubois published in 2007"

Low Temperature Implementation of Dopant-Segregated Band-edge Metallic S/D junctions in Thin-Body SOI p-MOSFETs

Abstract: This paper proposes the implementation of a dopant segregated band-edge silicide using implantation-to-silicide and low temperature activation (500degC). The integration of platinum silicide coupled to boron segregation demonstrates a 50% enhancement of the current drive over the dopant-free approach. RF characterization unveils a cut-off frequency fT of 180 GHz at Lg=30 nm without application of channel stressors.

Spacer-First Damascene-Gate FinFET Architecture Featuring Stringer-Free Integration

Abstract: This letter presents a new Damascene-gate FinFET process that inherently suppresses stringers, resulting from gate and spacers patterning. The so-called spacer-first integration scheme relies on the engineering of a hydrogen silsesquioxane layer by electron beam lithography followed by two selective compartmentalized development steps to successively release the Damascene-gate cavity and the source/drain (S/D) contact regions. In contrast to the existing gate-first and gate-last integration approaches, the resulting FinFET process does not impose any restriction or interdependency on the sizing of the fins, gate, spacers, and S/D regions. A complete morphological and electrical validation is proposed in the particular case of wrap-around self-aligned metallic Schottky S/D contacts.

Selective etching of Pt with respect to PtSi using a sacrificial low temperature germanidation process

Abstract: A soft and scalable etching procedure that selectively eliminates Pt without altering PtSi is proposed. The selective etch is based on the low temperature transformation of the excess Pt into a more reactive PtxGey phase that is easily etched in a sulfuric peroxide mixture. The mechanism of PtxGey alloying is detailed based on x-ray diffraction analysis. The innocuousness of the germanidation-based selective etch on the integrity of the PtSi∕Si junction is consolidated by Schottky barrier measurements. This process is expected to facilitate the integration and the scalability of PtSi on ultrathin silicon layers.

Articulating interaction and task models for the design of advanced interactive systems

Abstract: Mixed Interactive Systems (MIS) is a generic term encompassing mixed and augmented reality, augmented virtuality, and tangible interfaces systems. The work we present in this paper deals with the design of such systems. Several models have been proposed to describe mixed interactive systems. However, these models neither integrate MIS in the global user activity, nor take into account the dynamics of mixed interactive situations. Task models offer an interesting approach to cover these aspects. The purpose of our work is to contribute to the design of MIS by articulating mixed interaction models and tasks models. This paper presents complementarities and common points between these models, which will be used as the basis for the rules to articulate the task and interaction models.

Kinetics, stoichiometry, morphology, and current drive capabilities of Ir-based silicides

Abstract: A detailed study of the formation of iridium silicide obtained by ultrahigh vacuum annealing and atmospheric rapid thermal processing is proposed using x-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), and electrical characterizations. Using XPS analysis, the stoichiometry of each silicide phase (IrSi, IrSi1.6) is identified. A model based on the variation of the measured intensity of the Ir 4f spectra is used to obtain the kinetic coefficients of reaction of Ir silicidation (EA=2.48eV, D0=9cm2∕s). TEM cross sections indicate that the roughness of the silicide∕silicon interface increases with temperature. Lastly, electrical characteristics are used to identify the optimum annealing temperature to obtain an iridium silicide contact with the lowest Schottky barrier height to holes.

Evaluating advanced interaction techniques for navigating Google Earth

Abstract: This paper presents the design and comparison of a mouse-based interaction technique (hereafter IT) and two advanced IT, used in public spaces to support navigation in a 3D space. The comparison is based on a composite evaluation, including performance and satisfaction aspects. These preliminary results demonstrate that the use of mixed IT in a public space do not result in more differences among user than a mouse-based IT. It also highlights the fact that performance and satisfaction have to be considered simultaneously since they appear to be two complementary aspects of an evaluation, especially in public space environment, where the performance is no longer the only dimension to consider.

Participatory Design Meets Mixed Reality Design Models

Abstract: Participatory design and model-based approaches are two major HCI design approaches. Traditionally opposed, the first ones promote user’s creativity while the second ones support a more systematic approach of the design space. In Mixed Reality domain, combining these two aspects is especially crucial in order to support the design and to help the users to take into account the wide variety of emerging technologies. We introduce in this paper a solution to bring these two approaches together. In addition, we illustrate how the outcomes of this combination of formal and informal approaches serve as input for the implementation of the designed solution

Investigation of High Frequency Performance for Schottky-Barrier p-MOSFET

Abstract: Schottky-barrier source/drain (S/D) MOSFETs (SB-MOS) have recently demonstrated leading edge high frequency (HF) performance, featuring a 280 GHz current gain cut-off frequency fT at 30 nm of gate length. Although this figure represents the best ever recorded fT for a p-MOSFET, little effort has been produced, so far, to analyze key small signal elements (SSE) such as the transconductance G m and the total input capacitance Cgg that directly impact fT. This work demonstrates that the loss of transconductance related to the Schottky barrier (SB) is counterbalanced by a reduction of the total gate capacitance

A Model-based Approach to Describing and Reasoning About the Physicality of Interaction

Abstract: In this paper we consider the use of the ASUR interaction model and notation to capture and reason about some physical aspects of interaction. Using a running example of three alternative techniques for interacting with Google Earth, we present the ASUR model and notation and then show how the three techniques can be modelled. We finish with a discussion of the potential value and limits, for describing the physicality of the interaction, of the resulting models of these three techniques.

Television services over an ip/mpls convergent satellite system

Abstract: Satellite networks have been built by the DVB group dedicated to digital television service. However, in the service convergence trend, a future satellite network architecture has to be built in a less dedicated way to fit heterogeneous services. This article studies an example of a convergent television architecture in a unidirectional, geostationary, transparent satellite context. The goal here is to show the feasibility of a television service over a convergent satellite architecture. IP and MPLS are the convergent layers integrating the television service on the satellite access network. After describing the whole architecture, main technical problems are highlighted and discussed. Focus is made on DVB signaling migration, addressing and multiplexing issues, security, synchronization and scheduling strategies. Some simple quantitative and qualitative aspects are discussed for a possible migration.

An Original Selective Etch of Pt vs. PtSi using a Low Temperature Germanidation Process

Abstract: PtSi is very attractive for the future VLSI technologies as a contact silicide for nanometric pMOS devices because of its low barrier height to p-type Si, low silicon consumption, and low temperature formation (1,2). Also, the integration of PtSi as metallic source and drain in Schottky-Barrier p-type MOSFET appears as a performance booster to leverage the tight constraints associated to the junction module engineering (3,4).