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F. H. Julien

Researcher at University of Paris-Sud

Publications -  126
Citations -  2867

F. H. Julien is an academic researcher from University of Paris-Sud. The author has contributed to research in topics: Quantum well & Quantum dot. The author has an hindex of 30, co-authored 125 publications receiving 2804 citations. Previous affiliations of F. H. Julien include École Polytechnique Fédérale de Lausanne & Centre national de la recherche scientifique.

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Nanometer Scale Spectral Imaging of Quantum Emitters in Nanowires and Its Correlation to Their Atomically Resolved Structure

Luiz Fernando Zagonel, +11 more
- 05 Sep 2012 - 
TL;DR: The present work opens the way both to fundamental studies of quantum confinement in closely packed quantum emitters and to characterizations of optoelectronic devices presenting carrier localization on the nanometer scale.
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Nanometer Scale Spectral Imaging of Quantum Emitters in Nanowires and Its Correlation to Their Atomically Resolved Structure

Luiz Fernando Zagonel, +11 more
- 09 Feb 2011 - 
TL;DR: In this paper, the spectral imaging in the UV to visible range with nanometer scale resolution of closely packed GaN/AlN quantum disks in individual nanowires using an improved custom-made cathodoluminescence system is presented.
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Intraband absorption in n-doped InAs/GaAs quantum dots

Sébastien Sauvage, +4 more
- 10 Nov 1997 - 
TL;DR: In this paper, the authors investigated the intraband absorption within the conduction band of InAs/GaAs quantum dots and showed that the absorption can also be clearly observed using a photoinduced infrared absorption technique with the doped quantum dots.
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Near infrared quantum cascade detector in GaN∕AlGaN∕AlN heterostructures

Alon Vardi, +7 more
- 04 Jan 2008 - 
TL;DR: In this paper, a quantum cascade detector for GaN/Al/Al was implemented, which takes advantage of the large internal field existing in the nitrides in order to generate the essential saw tooth energy level structure.
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Growth of GaN free-standing nanowires by plasma-assisted molecular beam epitaxy:structural and optical characterization

Maria Tchernycheva, +11 more
- 26 Sep 2007 - 
TL;DR: In this paper, the growth, structural and optical properties of GaN free-stranding nanowires synthesized in catalyst-free mode on Si(111) substrate by plasma-assisted molecular beam epitaxy were observed.