S
Sébastien Sauvage
Researcher at Université Paris-Saclay
Publications - 134
Citations - 3847
Sébastien Sauvage is an academic researcher from Université Paris-Saclay. The author has contributed to research in topics: Quantum dot & Germanium. The author has an hindex of 33, co-authored 131 publications receiving 3511 citations. Previous affiliations of Sébastien Sauvage include University of Paris & Centre national de la recherche scientifique.
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Band structure and optical gain of tensile-strained germanium based on a 30 band k⋅p formalism
TL;DR: In this paper, the authors investigated the band structure of tensile-strained germanium using a 30 band k⋅p formalism and obtained that the crossover from indirect to direct band gap occurs for a tensile in-plane strain of 1.9%.
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Enhancement of second-harmonic generation in a one-dimensional semiconductor photonic band gap
Yannick Dumeige,Petar Vidakovic,Sébastien Sauvage,Isabelle Sagnes,Juan Ariel Levenson,Concita Sibilia,Marco Centini,Giuseppe D'Aguanno,Michael Scalora +8 more
TL;DR: In this article, the authors demonstrate significant enhancement of second-order nonlinear interactions in a one-dimensional semiconductor Bragg mirror operating as a photonic band gap structure, thanks to a simultaneous availability of a high density of states and the improvement of effective coherent length near the photonic bands edge.
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Targeting the alpha 1 subunit of the sodium pump to combat glioblastoma cells.
Florence Lefranc,Tatjana Mijatovic,Yasuko Kondo,Sébastien Sauvage,Isabelle Roland,Olivier Debeir,Danijela Krstić,Vesna Vasić,Philippe Gailly,Seiji Kondo,Gustavo Blanco,Robert Kiss +11 more
TL;DR: In this paper, the effects of inhibiting Na+/K+-ATPase alpha 1 in human GBM cells with respect to cell proliferation; morphology; impact on intracellular Na+, Ca2+, and adenosine triphosphate; and changes in the actin cytoskeleton were investigated.
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Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys
Anas Elbaz,Anas Elbaz,Dan Buca,Nils von den Driesch,Nils von den Driesch,Konstantinos Pantzas,Gilles Patriarche,Nicolas Zerounian,Etienne Herth,Xavier Checoury,Sébastien Sauvage,Isabelle Sagnes,Antonino Foti,Razvigor Ossikovski,Jean-Michel Hartmann,Frederic Boeuf,Zoran Ikonic,Philippe Boucaud,Detlev Grützmacher,Detlev Grützmacher,Moustafa El Kurdi +20 more
TL;DR: In this article, a tensile strain was applied to a 300nm-thick GeSn layer with 5.4 at% Sn, which is an indirect-bandgap semiconductor as-grown, to transform it into a direct-band gap semiconductor that supports lasing.
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Control of direct band gap emission of bulk germanium by mechanical tensile strain
M. El Kurdi,H. Bertin,Emile Martincic,M. de Kersauson,Guy Fishman,Sébastien Sauvage,Alain Bosseboeuf,Philippe Boucaud +7 more
TL;DR: In this paper, the recombination energy of the direct band gap photoluminescence (PL) of germanium can be controlled by an external mechanical stress provided by an apparatus commonly used for bulge or blister test.