F. Höhnsdorf

TL;DR: In this article, the authors applied optimized low-temperature metal organic vapour phase epitaxy (MOVPE) using the group V sources 1,1-dimethylhydrazine (UDMHy) in combination with tertiarybutylarsine (TBAs) to achieve record low threshold current densities of 0.18 and 0.16 W/A per facet, respectively, for 800 µm long broad area lasers emitting at 1.28 and 1.38 µm, respectively.

TL;DR: In this paper, a three-band kp description of the conduction band state E− and E+ and the valence band at k=0.2% is presented.

TL;DR: In this article, a (GaIn)As/Ga(PAs) vertical-cavity surface-emitting laser for room-temperature emission at 1.3 μm wavelength is designed and grown by metal-organic vapor phase epitaxy using dimethylhydrazine and tertiary butylarsine.

TL;DR: In this paper, the optimization of the metalorganic vapour phase epitaxial (MOVPE) growth of lattice-matched (GaIn)(NAs)/GaAs multiple quantum well (MQW) structures grown by using triethylgallium (TEGa) and trimethylindium (TMIn) in combination with tertiarybutyl arsine (TBAs) and 1,1-dimethylhydrazine (UDMHy) is investigated in detail by means of high resolution X-ray diffraction (XRD), scanning electron microscopy (

TL;DR: Optical gain spectra of (GaIn)(NAs)/GaAs quantum-well lasers operating in the 1.3-μm-emission-wavelength regime are measured and compared to those of a commercial (GAIn)(AsP)/InP structure as discussed by the authors.