Showing papers by "Florian Godel published in 2021"
TL;DR: In this paper, a growth process relying on pulsed laser deposition for the elaboration of complex van der Waals heterostructures on large scales, at a 400 °C CMOS compatible temperature, is presented.
Abstract: We present a growth process relying on pulsed laser deposition for the elaboration of complex van der Waals heterostructures on large scales, at a 400 °C CMOS-compatible temperature. Illustratively...
22 citations
TL;DR: In this article, the Coulomb diamond pattern characteristics of a single electron transistor (SET) are reported, with specific doping dependent nonlinear features arising from the 0D/2D geometry that are elucidated by theoretical modeling.
Abstract: Mixed-dimensional heterostructures formed by the stacking of 2D materials with nanostructures of distinct dimensionality constitute a new class of nanomaterials that offers multifunctionality that goes beyond those of single dimensional systems. An unexplored architecture of single electron transistor (SET) is developed that employs heterostructures made of nanoclusters (0D) grown on a 2D molybdenum disulfide (MoS2) channel. Combining the large Coulomb energy of the nanoclusters with the electronic capabilities of the 2D layer, the concept of 0D–2D vertical SET is unveiled. The MoS2 underneath serves both as a charge tunable channel interconnecting the electrode, and as bottom electrode for each v-SET cell. In addition, its atomic thickness makes it thinner than the Debye screening length, providing electric field transparency functionality that allows for an efficient electric back gate control of the nanoclusters charge state. The Coulomb diamond pattern characteristics of SET are reported, with specific doping dependent nonlinear features arising from the 0D/2D geometry that are elucidated by theoretical modeling. These results hold promise for multifunctional single electron device taking advantage of the versatility of the 2D materials library, with as example envisioned spintronics applications while coupling quantum dots to magnetic 2D material, or to ferroelectric layers for neuromorphic devices.
11 citations
TL;DR: In this article, the angle dependence of the first and second-harmonic longitudinal and transverse resistivities of PdCoO2 was analyzed to identify a Rashba-driven unidirectional magnetoresistance that competes with the anomalous Nernst effect below the Curie point.
Abstract: Rashba interfaces yield efficient spin-charge interconversion and give rise to nonreciprocal transport phenomena. Here, we report magnetotransport experiments in few-nanometer-thick films of PdCoO2, a delafossite oxide known to display a large Rashba splitting and surface ferromagnetism. By analyzing the angle dependence of the first- and second-harmonic longitudinal and transverse resistivities, we identify a Rashba-driven unidirectional magnetoresistance that competes with the anomalous Nernst effect below the Curie point. We estimate a Rashba coefficient of 0.75 ± 0.3 eV A and argue that our results qualify delafossites as a new family of oxides for nanospintronics and spin-orbitronics, beyond perovskite materials.
6 citations
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TL;DR: In this article, the angle dependence of the first and second-harmonic longitudinal and transverse resistivities of PdCoO$_2 was analyzed to identify a Rashba-driven unidirectional magnetoresistance that competes with the anomalous Nernst effect.
Abstract: Rashba interfaces yield efficient spin-charge interconversion and give rise to nonreciprocal transport phenomena. Here, we report magnetotransport experiments in few-nanometer-thick films of PdCoO$_2$, a delafossite oxide known to display a large Rashba splitting and surface ferromagnetism. By analyzing the angle dependence of the first- and second-harmonic longitudinal and transverse resistivities, we identify a Rashba-driven unidirectional magnetoresistance that competes with the anomalous Nernst effect below the Curie point. We estimate a Rashba coefficient of 0.75 {\pm} 0.3 eV {\AA} and argue that our results qualify delafossites as a new family of oxides for nano-spintronics and spin-orbitronics, beyond perovskite materials.