The dielectric properties of tissues have been extracted from the literature of the past five decades and presented in a graphical format. The purpose is to assess the current state of knowledge, expose the gaps there are and provide a basis for the evaluation and analysis of corresponding data from an on-going measurement programme.

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The dielectric properties of biological tissues: I. Literature survey

A review of recent MOSFET threshold voltage extraction methods

The contribution of solar photovoltaics (PV׳s) in generation of electric power is continually increasing. PV cells are commonly modelled as circuits. Finding appropriate circuit model parameters of PV cells is crucial for performance evaluation, control, efficiency computations and maximum power point tracking of solar PV systems. The problem of finding circuit model parameters of solar PV cells is referred to as “PV cell model parameter estimation problem,” and is highly attracted by researchers. In this paper, the existing research works on PV cell model parameter estimation problem are classified into three categories and the research works of those categories are reviewed. Based on the conducted review, some recommendations for future research are provided.

Parameter estimation of solar photovoltaic (PV) cells: A review

(IEEE Transactions on Electron Devices,36(12):2816-2820)Field-Drifting Resonant Tunneling Through a-Si:H/a-Sil-xCx:H Quantum Wells at Different Locations of the i-Layer of a p-i-n Structure

Revisiting MOSFET threshold voltage extraction methods

In this paper, we review the compact-modeling framework for undoped double-gate (DG) silicon-on-insulator (SOI) MOSFETs. The use of multiple gates has emerged as a new technology to possibly replace the conventional planar MOSFET when its feature size is scaled to the sub-50-nm regime. MOSFET technology has been the choice for mainstream digital circuits for very large scale integration as well as for other high-frequency applications in the low-gigahertz range. But the continuing scaling of MOSFET presents many challenges, and multiple-gate, particularly DG, SOI devices seem to be attractive alternatives as they can effectively reduce the short-channel effects and yield higher current drive. Core compact models, including the analysis for surface potential and drain-current, for both the symmetric and asymmetric DG SOI MOSFETs, are discussed and compared. Numerical simulations are also included in order to assess the validity of the models reviewed

A Review of Core Compact Models for Undoped Double-Gate SOI MOSFETs

We extend our previous Lambert function-based analytic solution for the surface potential of undoped-body single-gate bulk MOSFETs to offer an explicit analytic solution of the surface potential of undoped-body symmetric dual-gate devices. The error produced by the proposed solution compared to exact results is reasonably small for typical device dimensions and bias conditions.

Analytic solution of the channel potential in undoped symmetric dual-gate MOSFETs

Classical analyses of various conventional solar cell models are examined. They are unified through the separation of their linear and nonlinear components and the application of Thevenin's theorem to the linear terms. An explicit multiexponential model with series and shunt resistances is proposed as an alternative to conventional implicit multiexponential models commonly used to describe significant parallel conduction mechanisms in real solar cells. The proposed model is better suited than conventional models for repetitive simulation applications because of its inherently higher computational efficiency. Its explicit nature is a very useful feature for direct analytic differentiation and integration. The model's applicability has been assessed by parameter extraction and subsequent playback using synthetic I–V characteristics of a hypothetical solar cell at various illumination levels chosen purely for illustrative purposes.

An Explicit Multiexponential Model as an Alternative to Traditional Solar Cell Models With Series and Shunt Resistances

Preface 1 MOSFET Physics and Modeling 2 MOSFET Simulation Using Device Simulator 3 Extraction of the Threshold Voltage of MOSFETs 4 Methods for Extracting the Effective Channel Length of MOSFETs 5 Extraction of the Drain and Source Series Resistances of MOSFETs 6 Parameter Extraction of Lightly-Doped Drain (LDD) MOSFETs Appendices A Physical Constants and Unit Conversions B Properties of Germanium, Silicon, and Gallium Arsenide (at 300 K) C Properties of SiO2 and Si3N4 (at 300 K) D Derivation of the Integral Function and its Applications to Parameter Extraction Subject Index About the Authors

Francisco J. García-Sánchez

Papers

Revisiting MOSFET threshold voltage extraction methods

A Review of Core Compact Models for Undoped Double-Gate SOI MOSFETs

Analytic solution of the channel potential in undoped symmetric dual-gate MOSFETs

An Explicit Multiexponential Model as an Alternative to Traditional Solar Cell Models With Series and Shunt Resistances

Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction