G.B. Gao

TL;DR: In this article, the emitter ballasting resistor for power heterojunction bipolar transistors (HBTs) was investigated and the current handling capability of power HBTs was found to improve with ballasting resistance.

TL;DR: In this article, a review of recent developments in strained layer epitaxial systems is presented, which can be tailored to a particular application with, in many cases, performances that are and out of reach with lattice-matched systems alone.

TL;DR: In this article, the thermal behavior of semiconductor devices fabricated with a variety of different materials has been analyzed using the three-dimensional transmission-line matrix (TLM) method, which can easily incorporate the temperature dependence of thermal parameters, is numerically stable and compares favorably with other numerical techniques in computational expenditure and convenience in modeling complex geometries.

TL;DR: In this article, design rules of AlGaAs-GaAs heterojunction bipolar transistors for power applications are presented and compared to those for Si microwave power transistors, including the tradeoff between power gain, output power, power-added efficiency in the layout design, layer structure selection, and thermal design.

TL;DR: In this article, high quality GaAs/Ge/GaAs heterojunctions grown by molecular beam epitaxy were reported, and the electrical properties of the heterjunctions were studied and the transistor characteristics of a prototype N−Al0.22Ga0.78As/p+•Ge/n−GaAs bipolar transistor was presented.