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G

G. Hopkinson

Researcher at Surrey Satellite Technology

Publications -  4
Citations -  51

G. Hopkinson is an academic researcher from Surrey Satellite Technology. The author has contributed to research in topics: Electron & Weak gravitational lensing. The author has an hindex of 2, co-authored 4 publications receiving 47 citations.

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Assessment of space proton radiation-induced charge transfer inefficiency in the CCD204 for the Euclid space observatory

TL;DR: In this article, the effects of radiation-induced charge transfer inefficiency (CTI) in the Euclid CCDs over the course of the 5-year mission at L2 are understood.
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Digging supplementary buried channels: investigating the notch architecture within the CCD pixels on ESA's Gaia satellite

TL;DR: In this article, the authors present the largest published sample of Gaia CCD SBC Full Well Capacity (FWC) laboratory measurements and simulations based on 13 devices and find that all the CCDs manufactured post-2004 have SBCs with FWCs in the upper half of each CCD that are systematically smaller by two orders of magnitude compared to those manufactured pre-2004 (thousands of electrons).
Journal ArticleDOI

Modelling Gaia CCD pixels with Silvaco 3D engineering software

TL;DR: In this paper, the Silvaco 3D engineering software model of the Gaia CCD pixel and two applications for Gaia are presented: (1) physically interpreting supplementary buried channel (SBC) capacity measurements (pocket-pumping and first pixel response) in terms of e2v manufacturing doping alignment tolerances; and (2) deriving electron densities within a charge packet as a function of the number of constituent electrons and 3D position within the charge packets as input to microscopic models being developed to simulate radiation damage.
Journal ArticleDOI

Modelling gaia ccd pixels with silvaco 3d engineering software

TL;DR: In this paper, the Silvaco 3D engineering software model of the Gaia CCD pixel and two applications for Gaia are presented: (1) physically interpreting supplementary buried channel (SBC) capacity measurements (pocket-pumping and first pixel response) in terms of e2v manufacturing doping alignment tolerances; and (2) deriving electron densities within a charge packet as a function of the number of constituent electrons and 3D position within the charge packets as input to microscopic models being developed to simulate radiation damage.