G. Kamarinos

TL;DR: In this article, the structural and electrical properties of polycrystalline silicon thin-film transistors (polysilicon TFTs) were investigated in relation to the laser energy density.

TL;DR: In this article, a linear region model was proposed to optimize the energy density of laser annealing and to make predictions about polysilicon TFT technology, since TFTs performances versus grain size plots can be obtained.

TL;DR: In this paper, the authors showed that hot-carrier stress in laser annealed polycrystalline silicon thin-film transistors provokes an anomalous turn-on voltage variation.

TL;DR: In this paper, the off-state current in polycrystalline silicon thin-film transistors (polysilicon TFTs) is investigated systematically by conduction measurements at various temperatures and low-frequency noise measurements at room temperature.

TL;DR: In this article, the electrical properties of TiN x contacts to n-and p-type GaN films, deposited by reactive magnetron sputtering at room temperature, are investigated. And it is shown that the ohmic behavior of the contacts is associated with the presence of a high density of interface states and not to the low Schottky barrier.