G
G. Wagner
Researcher at Institut für Kristallzüchtung
Publications - 30
Citations - 1149
G. Wagner is an academic researcher from Institut für Kristallzüchtung. The author has contributed to research in topics: Thin film & Metalorganic vapour phase epitaxy. The author has an hindex of 15, co-authored 30 publications receiving 895 citations. Previous affiliations of G. Wagner include Leibniz Institute for Neurobiology.
Papers
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Journal ArticleDOI
Homoepitaxial growth of β-Ga2O3 layers by metal-organic vapor phase epitaxy
G. Wagner,M. Baldini,Daniela Gogova,Martin Schmidbauer,Robert Schewski,Martin Albrecht,Zbigniew Galazka,Detlef Klimm,Roberto Fornari +8 more
TL;DR: In this paper, the structural properties of the β-Ga2O3 epitaxial layers were characterized by X-ray diffraction pattern and high resolution transmission electron microscopy.
Journal ArticleDOI
Electrical compensation by Ga vacancies in Ga2O3 thin films
Esa Korhonen,Filip Tuomisto,Daniela Gogova,G. Wagner,M. Baldini,Zbigniew Galazka,Robert Schewski,Martin Albrecht +7 more
TL;DR: In this article, the authors applied positron annihilation spectroscopy to study the vacancy defects in undoped and Si-doped Ga2O3 thin films and found that Ga vacancies are formed efficiently during metal-organic vapor phase epitaxy growth of Ga2 O3 thin film Their concentrations are high enough to fully account for the electrical compensation of Si doping.
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Structural properties of Si-doped β-Ga2O3 layers grown by MOVPE
Daniela Gogova,G. Wagner,M. Baldini,Martin Schmidbauer,Klaus Irmscher,Robert Schewski,Zbigniew Galazka,Martin Albrecht,Roberto Fornari +8 more
TL;DR: In this article, the interplay between growth conditions, structural and electrical properties of the Ga-oxide layers is studied, and the different nature of defects in undoped and doped material is investigated by HRTEM.
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Phonons as probes in self-organized SiGe islands
J. Groenen,Robert Carles,Silke Christiansen,Martin Albrecht,W. Dorsch,Horst P. Strunk,H. Wawra,G. Wagner +7 more
TL;DR: In this paper, optical phonons are used as efficient probes in self-organized Si 1−xGex islands grown on Si(001) to determine the alloy composition and residual strain in the islands.
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Evolution of planar defects during homoepitaxial growth of β-Ga2O3 layers on (100) substrates—A quantitative model
Robert Schewski,M. Baldini,Klaus Irmscher,Andreas Fiedler,Toni Markurt,B. Neuschulz,T. Remmele,Tobias Schulz,G. Wagner,Zbigniew Galazka,Martin Albrecht +10 more
TL;DR: In this paper, the homoepitaxial growth of β-Ga2O3 (100) grown by metal-organic vapour phase as dependent on miscut-angle vs. the c direction was studied.