Metal halide perovskite materials are an emerging class of solution-processable semiconductors with considerable potential for use in optoelectronic devices1–3. For example, light-emitting diodes (LEDs) based on these materials could see application in flat-panel displays and solid-state lighting, owing to their potential to be made at low cost via facile solution processing, and could provide tunable colours and narrow emission line widths at high photoluminescence quantum yields4–8. However, the highest reported external quantum efficiencies of green- and red-light-emitting perovskite LEDs are around 14 per cent7,9 and 12 per cent8, respectively—still well behind the performance of organic LEDs10–12 and inorganic quantum dot LEDs13. Here we describe visible-light-emitting perovskite LEDs that surpass the quantum efficiency milestone of 20 per cent. This achievement stems from a new strategy for managing the compositional distribution in the device—an approach that simultaneously provides high luminescence and balanced charge injection. Specifically, we mixed a presynthesized CsPbBr3 perovskite with a MABr additive (where MA is CH3NH3), the differing solubilities of which yield sequential crystallization into a CsPbBr3/MABr quasi-core/shell structure. The MABr shell passivates the nonradiative defects that would otherwise be present in CsPbBr3 crystals, boosting the photoluminescence quantum efficiency, while the MABr capping layer enables balanced charge injection. The resulting 20.3 per cent external quantum efficiency represents a substantial step towards the practical application of perovskite LEDs in lighting and display. A strategy for managing the compositional distribution in metal halide perovskite light-emitting diodes enables them to surpass 20% external quantum efficiency—a step towards their practical application in lighting and displays.

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Perovskite light-emitting diodes with external quantum efficiency exceeding 20 per cent

Light-emitting diodes (LEDs), which convert electricity to light, are widely used in modern society—for example, in lighting, flat-panel displays, medical devices and many other situations. Generally, the efficiency of LEDs is limited by nonradiative recombination (whereby charge carriers recombine without releasing photons) and light trapping1–3. In planar LEDs, such as organic LEDs, around 70 to 80 per cent of the light generated from the emitters is trapped in the device4,5, leaving considerable opportunity for improvements in efficiency. Many methods, including the use of diffraction gratings, low-index grids and buckling patterns, have been used to extract the light trapped in LEDs6–9. However, these methods usually involve complicated fabrication processes and can distort the light-output spectrum and directionality6,7. Here we demonstrate efficient and high-brightness electroluminescence from solution-processed perovskites that spontaneously form submicrometre-scale structures, which can efficiently extract light from the device and retain wavelength- and viewing-angle-independent electroluminescence. These perovskites are formed simply by introducing amino-acid additives into the perovskite precursor solutions. Moreover, the additives can effectively passivate perovskite surface defects and reduce nonradiative recombination. Perovskite LEDs with a peak external quantum efficiency of 20.7 per cent (at a current density of 18 milliamperes per square centimetre) and an energy-conversion efficiency of 12 per cent (at a high current density of 100 milliamperes per square centimetre) can be achieved—values that approach those of the best-performing organic LEDs. The formation of submicrometre-scale structure in perovskite light-emitting diodes can raise their external quantum efficiency beyond 20%, suggesting the possibility of both high efficiency and high brightness.

Perovskite light-emitting diodes based on spontaneously formed submicrometre-scale structures

Lighting accounts for one-fifth of global electricity consumption1. Single materials with efficient and stable white-light emission are ideal for lighting applications, but photon emission covering the entire visible spectrum is difficult to achieve using a single material. Metal halide perovskites have outstanding emission properties2,3; however, the best-performing materials of this type contain lead and have unsatisfactory stability. Here we report a lead-free double perovskite that exhibits efficient and stable white-light emission via self-trapped excitons that originate from the Jahn–Teller distortion of the AgCl6 octahedron in the excited state. By alloying sodium cations into Cs2AgInCl6, we break the dark transition (the inversion-symmetry-induced parity-forbidden transition) by manipulating the parity of the wavefunction of the self-trapped exciton and reduce the electronic dimensionality of the semiconductor4. This leads to an increase in photoluminescence efficiency by three orders of magnitude compared to pure Cs2AgInCl6. The optimally alloyed Cs2(Ag0.60Na0.40)InCl6 with 0.04 per cent bismuth doping emits warm-white light with 86 ± 5 per cent quantum efficiency and works for over 1,000 hours. We anticipate that these results will stimulate research on single-emitter-based white-light-emitting phosphors and diodes for next-generation lighting and display technologies. After alloying with metal cations, a lead-free halide double perovskite shows stable performance and remarkably efficient white-light emission, with possible applications in lighting and display technologies.

Efficient and stable emission of warm-white light from lead-free halide double perovskites

Perovskite quantum dots have significant potential for light-emitting devices because of their high colour purity and colour tunability in the visible spectrum. Here, we report highly efficient red perovskite quantum dot-based light-emitting devices. The quantum dots were fabricated by anion exchange from pristine CsPbBr3 using halide-anion-containing alkyl ammonium and aryl ammonium salts. Anion-exchange quantum dots based on ammonium iodine salts exhibited a strong redshift from green emission to a deep-red emission at 649 nm as well as higher photoluminescence quantum yields. Furthermore, the quantum dot-based light-emitting device with the alkyl ammonium iodine salt exhibited an external quantum efficiency of 21.3% and high colour purity, with Commission Internationale de l’Eclairage coordinates of (0.72, 0.28), while the light-emitting device with the aryl ammonium iodine salt showed an external quantum efficiency of 14.1%. Finally, the operational stability of the latter was 36 times higher because the surface ligand density of the corresponding quantum dots was lower. Perovskite quantum dots (QDs) are synthesized via an anion-exchange process where CsPbBr3 is used to realize a highly efficient red light-emitting diode (LED). The perovskite QD-based LED exhibits the highest external quantum efficiency of more than 20% compared with perovskite LEDs.

Anion-exchange red perovskite quantum dots with ammonium iodine salts for highly efficient light-emitting devices

A major efficiency limit for solution-processed perovskite optoelectronic devices, for example light-emitting diodes, is trap-mediated non-radiative losses. Defect passivation using organic molecul ...

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Rational molecular passivation for high-performance perovskite light-emitting diodes

Perovskite quantum wells yield highly efficient LEDs spanning the visible and near-infrared.

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Perovskite light-emitting diodes based on solution-processed self-organized multiple quantum wells

Sky-blue perovskite light-emitting diodes based on quasi-two-dimensional layered perovskites

Room-temperature electroluminescence (EL) is demonstrated from a light-emitting diode (LED) based on two-dimensional lead halide perovskites, (C6H5NH3)2PbI4. The device has a multilayer structure of ITO/Poly(3,4-ethylenedioxythiophene):Poly(styrenesulfonate)/(C6H5CH2NH3)2PbI4/Bathophenanthroline/Al. The EL emission peaks at 526 nm with a narrow full width at half maximum of 15 nm, which origins from perovskite exciton emission. The LED device exhibits a maximum luminance of ∼9 cd m−2 at a bias of 5 V.

Room-temperature electroluminescence from two-dimensional lead halide perovskites

The invention discloses a perovskite photoelectric device, which comprises a substrate, electrode layers and a function layer. One electrode layer is arranged on the surface of the substrate; the function layer is arranged between the electrode layers; and the function layer at least comprises a perovskite layer, wherein the perovskite layer is a perovskite material having a self-assembled multiple-quantum-well structure. By adjusting material components, controllable adjustment of width of multiple quantum wells and effective energy transfer between the multiple quantum wells can be realized; emitting color can be near ultraviolet, visible light and near infrared light; and the problems of discontinuity and poor stability of an existing perovskite material thin film can be solved effectively. The perovskite photoelectric device is simple in process and low in cost, and is suitable for being widely applied to industrial production of large-area, low-cost, flexible substrate and high-performance devices. The invention also discloses the perovskite material, which can be used for photoluminescence, electroluminescence, photovoltaic and thin film transistor devices.

Perovskite photoelectric device and preparation method thereof and perovskite material

The present invention discloses a perovskite optoelectronic device which includes a substrate, electrode layers and functional layers. The electrode layer is deposited on the substrate, the functional layer is deposited between the electrode layers, and the functional layer at least includes a perovskite layer, wherein the perovskite layer is a perovskite material possessing a self-organized multiple quantum well structure. By adjusting material components, controllable adjustment of the structure of the multiple quantum wells and effective energy transfer between the multiple quantum wells can be implemented, and light emitting color may be near-ultraviolet light, visible light and near-infrared light; moreover, the problems of low coverage and poor stability of the existing perovskite films can be effectively solved. The perovskite optoelectronic device prepared according to the present invention has the advantage of easy process and low cost, and is suitable for industrialized production of devices with large area, low cost, flexible substrate and high efficiency. The present invention also discloses a perovskite material, which can be used in photoluminescence, electroluminescence, photovoltaic and thin film transistor devices.

Ge Rui

Papers

Perovskite light-emitting diodes based on solution-processed self-organized multiple quantum wells

Sky-blue perovskite light-emitting diodes based on quasi-two-dimensional layered perovskites

Room-temperature electroluminescence from two-dimensional lead halide perovskites

Perovskite photoelectric device and preparation method thereof and perovskite material

Perovskite optoelectronic device, preparation method therefor and perovskite material