Geetak Gupta

TL;DR: In this article, a decrease in the background carrier concentration and threading dislocation density with an increase in the thickness of unintentionally doped (UID) GaN grown on sapphire was demonstrated.

TL;DR: In this paper, a method for measuring the mean free path and extracting the momentum relaxation time of hot electrons in GaN using the hot electron transistor (HET) was presented, where electrons are injected over a high energy emitter barrier into the base where they experience quasi-ballistic transport well above the conduction band edge.

TL;DR: In this article, an experimental investigation of the influence of an AlN interlayer on the electron mobility and the device characteristics of N-polar AlGaN/GaN metal-insulator-semiconductor-high electron mobility transistors grown by metal-organic chemical vapor deposition on miscut sapphire substrates is presented.

TL;DR: In this article, the Schottky barrier height between AlInGaN and technologically relevant metals like nickel was characterized using multiple linear regression, and it was found that alloy composition fluctuations inherent to low-temperature III-N alloys result in a barrier height inhomogeneity.

TL;DR: In this paper, a combinational back barrier with both AlGaN and InAlN materials is proposed and the dependence of channel conductivity on channel thickness is investigated for different back barrier designs.