H
Haoran Li
Researcher at University of California, Santa Barbara
Publications - 66
Citations - 1282
Haoran Li is an academic researcher from University of California, Santa Barbara. The author has contributed to research in topics: Gallium nitride & High-electron-mobility transistor. The author has an hindex of 15, co-authored 63 publications receiving 849 citations.
Papers
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Journal ArticleDOI
Recent progress in metal-organic chemical vapor deposition of $\left( 000\bar{1} \right)$ N-polar group-III nitrides
Stacia Keller,Haoran Li,Matthew A. Laurent,Yan-Ling Hu,Nathan Pfaff,Jing Lu,David F. Brown,Nicholas Fichtenbaum,James S. Speck,Steven P. DenBaars,Umesh K. Mishra +10 more
TL;DR: In this article, the progress in metal-organic chemical vapor deposition of high quality N-polar (Al, Ga, In)N films on sapphire, silicon carbide and silicon substrates is reviewed with focus on key process components such as utilization of vicinal substrates, conditions ensuring a high surface mobility of species participating in the growth process, and low impurity incorporation.
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Demonstration of Constant 8 W/mm Power Density at 10, 30, and 94 GHz in State-of-the-Art Millimeter-Wave N-Polar GaN MISHEMTs
Brian Romanczyk,Steven Wienecke,Matthew Guidry,Haoran Li,Elaheh Ahmadi,Xun Zheng,Stacia Keller,Umesh K. Mishra +7 more
TL;DR: In this paper, the performance of N-polar GaN-based metal-insulator-semiconductor high-electron-mobility transistors at 30 and 94 GHz was investigated.
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N-Polar GaN Cap MISHEMT With Record Power Density Exceeding 6.5 W/mm at 94 GHz
Steven Wienecke,Brian Romanczyk,Matthew Guidry,Haoran Li,Elaheh Ahmadi,Karine Hestroffer,Xun Zheng,Stacia Keller,Umesh K. Mishra +8 more
TL;DR: In this paper, a novel N-Polar GaN cap (MIS) high electron mobility transistor demonstrating record 6.7-W/mm power density with an associated power-added efficiency of 14.4% at 94 GHz is presented.
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N-Polar GaN HEMTs Exhibiting Record Breakdown Voltage Over 2000 V and Low Dynamic On-Resistance
Onur S. Koksaldi,Jeffrey Haller,Haoran Li,Brian Romanczyk,Matthew Guidry,Steven Wienecke,Stacia Keller,Umesh K. Mishra +7 more
TL;DR: In this paper, Nitrogen polar (N-Polar) GaN high-electron-mobility transistors targeting high-voltage switching applications were fabricated on epi-layers grown by metal-organic chemical vapor deposition on sapphire substrates.
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W-Band Power Performance of SiN-Passivated N-Polar GaN Deep Recess HEMTs
Brian Romanczyk,Umesh K. Mishra,Xun Zheng,Matthew Guidry,Haoran Li,Nirupam Hatui,Christian Wurm,Athith Krishna,Elaheh Ahmadi,Stacia Keller +9 more
TL;DR: In this article, a 40nm-thick ex-situ silicon nitride passivation layer was added to nitrogen-polar gallium nitride (GNT) transistors to improve the dispersion control.