The semiconductor ZnO has gained substantial interest in the research community in part because of its large exciton binding energy (60meV) which could lead to lasing action based on exciton recombination even above room temperature. Even though research focusing on ZnO goes back many decades, the renewed interest is fueled by availability of high-quality substrates and reports of p-type conduction and ferromagnetic behavior when doped with transitions metals, both of which remain controversial. It is this renewed interest in ZnO which forms the basis of this review. As mentioned already, ZnO is not new to the semiconductor field, with studies of its lattice parameter dating back to 1935 by Bunn [Proc. Phys. Soc. London 47, 836 (1935)], studies of its vibrational properties with Raman scattering in 1966 by Damen et al. [Phys. Rev. 142, 570 (1966)], detailed optical studies in 1954 by Mollwo [Z. Angew. Phys. 6, 257 (1954)], and its growth by chemical-vapor transport in 1970 by Galli and Coker [Appl. Phys. ...

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A comprehensive review of zno materials and devices

Transparent conductors as solar energy materials: A panoramic review

The stability of two-dimensional (2D) layers and membranes is subject of a long standing theoretical debate. According to the so called Mermin-Wagner theorem, long wavelength fluctuations destroy the long-range order for 2D crystals. Similarly, 2D membranes embedded in a 3D space have a tendency to be crumpled. These dangerous fluctuations can, however, be suppressed by anharmonic coupling between bending and stretching modes making that a two-dimensional membrane can exist but should present strong height fluctuations. The discovery of graphene, the first truly 2D crystal and the recent experimental observation of ripples in freely hanging graphene makes these issues especially important. Beside the academic interest, understanding the mechanisms of stability of graphene is crucial for understanding electronic transport in this material that is attracting so much interest for its unusual Dirac spectrum and electronic properties. Here we address the nature of these height fluctuations by means of straightforward atomistic Monte Carlo simulations based on a very accurate many-body interatomic potential for carbon. We find that ripples spontaneously appear due to thermal fluctuations with a size distribution peaked around 70 \AA which is compatible with experimental findings (50-100 \AA) but not with the current understanding of stability of flexible membranes. This unexpected result seems to be due to the multiplicity of chemical bonding in carbon.

Intrinsic ripples in graphene

1D metal-oxide nanostructures have attracted much attention because metal oxides are the most fascinating functional materials. The 1D morphologies can easily enhance the unique properties of the metal-oxide nanostructures, which make them suitable for a wide variety of applications, including gas sensors, electrochromic devices, light-emitting diodes, field emitters, supercapacitors, nanoelectronics, and nanogenerators. Therefore, much effort has been made to synthesize and characterize 1D metal-oxide nanostructures in the forms of nanorods, nanowires, nanotubes, nanobelts, etc. Various physical and chemical deposition techniques and growth mechanisms are exploited and developed to control the morphology, identical shape, uniform size, perfect crystalline structure, defects, and homogenous stoichiometry of the 1D metal-oxide nanostructures. Here a comprehensive review of recent developments in novel synthesis, exceptional characteristics, and prominent applications of one-dimensional nanostructures of tungsten oxides, molybdenum oxides, tantalum oxides, vanadium oxides, niobium oxides, titanium oxides, nickel oxides, zinc oxides, bismuth oxides, and tin oxides is provided.

One-Dimensional Metal-Oxide Nanostructures: Recent Developments in Synthesis, Characterization, and Applications

The underlying physics of the application of low-temperature, low-pressure reactive plasmas in various nanoassembly processes is described. From the viewpoint of the ``cause and effect'' approach, this Colloquium focuses on the benefits and challenges of using plasma-based systems in nanofabrication of nanostructured silicon films, low-dimensional semiconducting quantum structures, ordered carbon nanotip arrays, highly crystalline ${\mathrm{TiO}}_{2}$ coatings, and nanostructured hydroxyapatite bioceramics. Other examples and future prospects of plasma-aided nanofabrication are also discussed.

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Colloquium: Reactive plasmas as a versatile nanofabrication tool

Synthesis and enhanced field emission of zinc oxide incorporated carbon nanotubes

Micro-fabricated single-layer graphenes (SLGs) on a silicon dioxide (SiO2)/Si substrate, a silicon nitride (SiN) membrane, and a suspended architecture are presented for their use as temperature sensors. These graphene temperature sensors act as resistance temperature detectors, showing a quadratic dependence of resistance on the temperature in a range between 283 K and 303 K. The observed resistance change of the graphene temperature sensors are explained by the temperature dependent electron mobility relationship (~T−4) and electron-phonon scattering. By analyzing the transient response of the SLG temperature sensors on different substrates, it is found that the graphene sensor on the SiN membrane shows the highest sensitivity due to low thermal mass, while the sensor on SiO2/Si reveals the lowest one. Also, the graphene on the SiN membrane reveals not only the fastest response, but also better mechanical stability compared to the suspended graphene sensor. Therefore, the presented results show that the temperature sensors based on SLG with an extremely low thermal mass can be used in various applications requiring high sensitivity and fast operation.

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A patterned single layer graphene resistance temperature sensor.

Disclosed are an oxide-based nonvolatile memory with superior resistive switching characteristics and a method for preparing the same. More particularly, the disclosure relates to a nonvolatile memory device having a metal/reduced graphene oxide (r-GO) thin film/metal structure and a method for preparing the same.

Nonvolatile Memory Device Using The Resistive Switching of Graphene Oxide And The Fabrication Method Thereof

A MoS2 nanosphere memristor with lateral gold electrodes was found to show photoresistive switching. The new device can be controlled by the polarization of nanospheres, which causes resistance switching in an electric field in the dark or under white light illumination. The polarization charge allows to change the switching voltage of the photomemristor, providing its multi-level operation. The device, polarized at a voltage 6 V, switches abruptly from a high resistance state (HRSL6) to a low resistance state (LRSL6) with the On/Off resistance ratio of about 10 under white light and smooth in the dark. Analysis of device conductivity in different resistive states indicates that its resistive state could be changed by the modulation of the charge in an electric field in the dark or under light, resulting in the formation/disruption of filaments with high conductivity. A MoS2 photomemristor has great potential as a multifunctional device designed by using cost-effective fabrication techniques.

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MoS2 memristor with photoresistive switching.

Blue-white light emission was obtained from glass/indium tin oxide (ITO)/n-ZnO nanorod array (NRA)/p+-Si vertical contact light emitting diodes (VCLEDs). The nanoscale p-n heterojunction VCLEDs were formed by direct engagement n−-tips of n-ZnO NRA grown vertically on an ITO/glass substrate with p+-Si wafer. Proposed configuration of the VCLED allows creating a high density (∼109 cm−2) of self-assembled ZnO/Si nanodiodes with point junctions of high quality due to structural perfection of the Si wafer and the tips of ZnO nanorods as well as providing a high injection current and light emission from the NRA VCLED required for solid state lighting.

Gennady N. Panin

Papers

Synthesis and enhanced field emission of zinc oxide incorporated carbon nanotubes

A patterned single layer graphene resistance temperature sensor.

Nonvolatile Memory Device Using The Resistive Switching of Graphene Oxide And The Fabrication Method Thereof

MoS2 memristor with photoresistive switching.

Vertical ZnO nanorod/Si contact light-emitting diode