Gregory M. Stephen

TL;DR: In this paper, the authors investigate a binary intermetallic that has an internal magnetic field, yet does not affect the spin of surrounding components, and show that as-grown epitaxial thin films of Mn{}_{3}$Al on GaAs(001) present the ideal D0${}_{ 3}$ Heusler phase.

TL;DR: This study investigates the evolution of the magnetoresistance of Bi2TexSe3−x for varying chalcogen ratios and constant growth conditions as a function of both temperature and angle of applied field.

TL;DR: In this article, the quaternary Heusler compound CrVTiAl has been synthesized with a lattice constant of a = 6.15 A.u.

TL;DR: In this article, ordered Cr2CoGa thin films were synthesized without phase segregation using molecular beam epitaxy, and the present as-grown films exhibit a low magnetic moment from antiferromagnetically coupled Cr and Co atoms as measured with superconducting quantum interface device magnetometry and soft X-ray magnetic circular dichroism.

TL;DR: In this article, a strong topological Hall effect was observed between 10 and 330 K with a significant increase in magnitude observed at 330 K. The authors suggest that strained FeGe films may host a SkX phase above room temperature when significant tensile strain is applied.