G
Guozhen Shen
Researcher at Chinese Academy of Sciences
Publications - 445
Citations - 30312
Guozhen Shen is an academic researcher from Chinese Academy of Sciences. The author has contributed to research in topics: Nanowire & Transmission electron microscopy. The author has an hindex of 84, co-authored 422 publications receiving 23992 citations. Previous affiliations of Guozhen Shen include University of Southern California & Chinese PLA General Hospital.
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CuCo2O4 Nanowires Grown on a Ni Wire for High‐Performance, Flexible Fiber Supercapacitors
TL;DR: In this paper, a flexible fiber supercapacitor was fabricated using a simple and rapid single-step hydrothermal method, growing CuCo2O4 nanostructures on Ni wires to use as fiber electrodes.
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Growth of Directly Transferable In2O3 Nanowire Mats for Transparent Thin-film Transistor Applications
TL;DR: This work focuses on the development of high performance transparent thin-fi lm transistors (TFTs) with high mobilities, high on-off ratios and low operating voltages through the synthesis and fabrication of CVD-grown metal oxide nanowires for transparent TFTs applications.
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Ultralong-life and high-rate web-like Li4Ti5O12 anode for high-performance flexible lithium-ion batteries
TL;DR: Li et al. as discussed by the authors reported a 3D web-like binder-free Li4Ti5O12 (LTO) anode assembled from numerous 1D nanowires exhibiting excellent cycling performance with high capacities of 153 and 115 mA·h·g−1 after 5,000 cycles at 2 C and 20 C, respectively.
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Fabrication of curled conducting polymer microfibrous arrays via a novel electrospinning method for stretchable strain sensors
TL;DR: Owing to the curled architectures of the as-spun fibrous polymer arrays, the sensors can be stretched reversibly with a linear elastic response to strain up to 4%, which is three times higher than that from electrospun nonwoven mats.
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Zn2GeO4 and In2Ge2O7 nanowire mats based ultraviolet photodetectors on rigid and flexible substrates.
TL;DR: High-quality single crystalline Zn2GeO4 nanowire (NW) mats and In2Ge2O7 NW mats were synthesized on a large scale and exhibited excellent photoconductive performance in terms of high sensitivity to the UV light, excellent stability and reproducibility, and fast response and recovery time.