G
Guozhen Shen
Researcher at Chinese Academy of Sciences
Publications - 445
Citations - 30312
Guozhen Shen is an academic researcher from Chinese Academy of Sciences. The author has contributed to research in topics: Nanowire & Transmission electron microscopy. The author has an hindex of 84, co-authored 422 publications receiving 23992 citations. Previous affiliations of Guozhen Shen include University of Southern California & Chinese PLA General Hospital.
Papers
More filters
Journal ArticleDOI
Fabrication of high-quality ZnTe nanowires toward high-performance rigid/flexible visible-light photodetectors.
TL;DR: Individual ZnTe nanowires based field-effect transistors was fabricated, showing evident p-type conductivity with an effect mobility, and flexible photodetectors were also fabricated with the features of excellent flexibility, stability and sensitivity to visible incident light.
Journal ArticleDOI
Constructing optimized wire electrodes for fiber supercapacitors
TL;DR: In this paper, the straight, bent, and coiled fiber super-capacitors (S-FSC, B-SC, and C-SC) showed the optimized and best performance.
Journal ArticleDOI
Ultraviolet/visible photodetectors with ultrafast, high photosensitivity based on 1D ZnS/CdS heterostructures
Zheng Lou,Ludong Li,Guozhen Shen +2 more
TL;DR: The results revealed the possibility of 1D ZnS/CdS heterostructures for application in the detection of UV and visible light and the as-fabricated flexible photodetectors showed great mechanical stability under different bending conditions.
Journal ArticleDOI
3D Dielectric Layer Enabled Highly Sensitive Capacitive Pressure Sensors for Wearable Electronics.
TL;DR: By detecting the pressure of fingers, a smart piano glove integrated with 10 circuits of finger joints is made, which realizes the real-time performance of the piano, and provides the possibility for the application of intelligent wearable electronic products such as virtual reality and human-machine interface in the future.
Journal ArticleDOI
Synthesis and characterization of S-doped ZnO nanowires produced by a simple solution-conversion process
TL;DR: Sulfur-doped ZnO nanowires were successfully synthesized by a very simple chemical solution-conversion process at room temperature as mentioned in this paper, in which the preconditioned SdO nanowsires were immersed in thiourea solution for 10 h to get Sdoped SnO Nanowires.