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H

H. H. Wang

Publications -  3
Citations -  93

H. H. Wang is an academic researcher. The author has contributed to research in topics: Gate oxide & Oxide. The author has an hindex of 2, co-authored 2 publications receiving 93 citations.

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Journal ArticleDOI

Degradation of oxynitride gate dielectric reliability due to boron diffusion

TL;DR: In this article, the impact of the suppression of boron diffusion via nitridation of SiO2 on gate oxide integrity and device reliability was investigated using oxynitride gate dielectrics.
Proceedings ArticleDOI

Ultra thin oxide reliability: effects of gate doping concentration and poly-Si/SiO/sub 2/ interface stress relaxation

TL;DR: In this paper, the impact of gate doping concentration on the ultra-thin gate oxide reliability was investigated for oxides of thickness ranging from 45 /spl Aring/ to 85 /pl Aring/.

Observation of η c → ωω in J / ψ → γωω

M. Ablikim, +412 more
TL;DR: M. Ablikim, M. Albrecht, S. Amoroso, F. An, Q. B. Cai, X. Cheng, W. Cheng , X. Huang, T. Heng, Z. Held, Y. Kühn, J. Hsken, N. Kliemt, L. Kiuchi, R. Khoukaz, P. Khan, A.