H. Sternschulte

TL;DR: The similar responses of single centers and a SiV ensemble in a low strain reference sample prove the ability to fabricate almost perfect single SiVs, revealing the true nature of the defect's electronic properties.

TL;DR: Measurements reveal a spin-state purity approaching unity in the excited state, highlighting the potential of the silicon-vacancy centre as an efficient spin-photon quantum interface.

TL;DR: In this paper, the authors investigated the temperature-dependent fine structure of the zero-phonon line (ZPL) of the SiV centres in chemical vapour deposition (CVD) nanodiamonds on iridium and an ensemble of SiV centers in a high-quality, low-stress CVD diamond film.

TL;DR: In this paper, the authors investigated the temperature dependent fine structure of the zero-phononon-line (ZPL) of SiV centres in CVD nanodiamonds.

TL;DR: In this article, the authors reported the production of nanodiamonds with 70-80 nm size via bead assisted sonic disintegration (BASD) of a polycrystalline chemical vapor deposition (CVD) film, which display high crystalline quality as well as intense narrowband (7 nm) room temperature luminescence at 738 nm due to incorporated silicon vacancy (SiV) centers.