The semiconductor ZnO has gained substantial interest in the research community in part because of its large exciton binding energy (60meV) which could lead to lasing action based on exciton recombination even above room temperature. Even though research focusing on ZnO goes back many decades, the renewed interest is fueled by availability of high-quality substrates and reports of p-type conduction and ferromagnetic behavior when doped with transitions metals, both of which remain controversial. It is this renewed interest in ZnO which forms the basis of this review. As mentioned already, ZnO is not new to the semiconductor field, with studies of its lattice parameter dating back to 1935 by Bunn [Proc. Phys. Soc. London 47, 836 (1935)], studies of its vibrational properties with Raman scattering in 1966 by Damen et al. [Phys. Rev. 142, 570 (1966)], detailed optical studies in 1954 by Mollwo [Z. Angew. Phys. 6, 257 (1954)], and its growth by chemical-vapor transport in 1970 by Galli and Coker [Appl. Phys. ...

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A comprehensive review of zno materials and devices

In the past ten years we have witnessed a revival of, and subsequent rapid expansion in, the research on zinc oxide (ZnO) as a semiconductor. Being initially considered as a substrate for GaN and related alloys, the availability of high-quality large bulk single crystals, the strong luminescence demonstrated in optically pumped lasers and the prospects of gaining control over its electrical conductivity have led a large number of groups to turn their research for electronic and photonic devices to ZnO in its own right. The high electron mobility, high thermal conductivity, wide and direct band gap and large exciton binding energy make ZnO suitable for a wide range of devices, including transparent thin-film transistors, photodetectors, light-emitting diodes and laser diodes that operate in the blue and ultraviolet region of the spectrum. In spite of the recent rapid developments, controlling the electrical conductivity of ZnO has remained a major challenge. While a number of research groups have reported achieving p-type ZnO, there are still problems concerning the reproducibility of the results and the stability of the p-type conductivity. Even the cause of the commonly observed unintentional n-type conductivity in as-grown ZnO is still under debate. One approach to address these issues consists of growing high-quality single crystalline bulk and thin films in which the concentrations of impurities and intrinsic defects are controlled. In this review we discuss the status of ZnO as a semiconductor. We first discuss the growth of bulk and epitaxial films, growth conditions and their influence on the incorporation of native defects and impurities. We then present the theory of doping and native defects in ZnO based on density-functional calculations, discussing the stability and electronic structure of native point defects and impurities and their influence on the electrical conductivity and optical properties of ZnO. We pay special attention to the possible causes of the unintentional n-type conductivity, emphasize the role of impurities, critically review the current status of p-type doping and address possible routes to controlling the electrical conductivity in ZnO. Finally, we discuss band-gap engineering using MgZnO and CdZnO alloys.

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Fundamentals of zinc oxide as a semiconductor

Antibacterial activity of zinc oxide nanoparticles (ZnO-NPs) has received significant interest worldwide particularly by the implementation of nanotechnology to synthesize particles in the nanometer region. Many microorganisms exist in the range from hundreds of nanometers to tens of micrometers. ZnO-NPs exhibit attractive antibacterial properties due to increased specific surface area as the reduced particle size leading to enhanced particle surface reactivity. ZnO is a bio-safe material that possesses photo-oxidizing and photocatalysis impacts on chemical and biological species. This review covered ZnO-NPs antibacterial activity including testing methods, impact of UV illumination, ZnO particle properties (size, concentration, morphology, and defects), particle surface modification, and minimum inhibitory concentration. Particular emphasize was given to bactericidal and bacteriostatic mechanisms with focus on generation of reactive oxygen species (ROS) including hydrogen peroxide (H2O2), OH− (hydroxyl radicals), and O2 −2 (peroxide). ROS has been a major factor for several mechanisms including cell wall damage due to ZnO-localized interaction, enhanced membrane permeability, internalization of NPs due to loss of proton motive force and uptake of toxic dissolved zinc ions. These have led to mitochondria weakness, intracellular outflow, and release in gene expression of oxidative stress which caused eventual cell growth inhibition and cell death. In some cases, enhanced antibacterial activity can be attributed to surface defects on ZnO abrasive surface texture. One functional application of the ZnO antibacterial bioactivity was discussed in food packaging industry where ZnO-NPs are used as an antibacterial agent toward foodborne diseases. Proper incorporation of ZnO-NPs into packaging materials can cause interaction with foodborne pathogens, thereby releasing NPs onto food surface where they come in contact with bad bacteria and cause the bacterial death and/or inhibition.

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Review on Zinc Oxide Nanoparticles: Antibacterial Activity and Toxicity Mechanism.

ZnO nanowire (NW) visible-blind UV photodetectors with internal photoconductive gain as high as G ∼ 108 have been fabricated and characterized. The photoconduction mechanism in these devices has been elucidated by means of time-resolved measurements spanning a wide temporal domain, from 10-9 to 102 s, revealing the coexistence of fast (τ ∼ 20 ns) and slow (τ ∼ 10 s) components of the carrier relaxation dynamics. The extremely high photoconductive gain is attributed to the presence of oxygen-related hole-trap states at the NW surface, which prevents charge-carrier recombination and prolongs the photocarrier lifetime, as evidenced by the sensitivity of the photocurrrent to ambient conditions. Surprisingly, this mechanism appears to be effective even at the shortest time scale investigated of t < 1 ns. Despite the slow relaxation time, the extremely high internal gain of ZnO NW photodetectors results in gain-bandwidth products (GB) higher than ∼10 GHz. The high gain and low power consumption of NW photodetec...

http://www1.spms.ntu.edu.sg/~oson/publications/papers/NL%207,%201003%20(2007).pdf

ZnO Nanowire UV Photodetectors with High Internal Gain

Green synthesis of metal nanoparticles using plants

There has been a resurgence of complex oxides of late owing to their ferroelectric and ferromagnetic properties. Although these properties had been recognized decades ago, the renewed interest stems from modern deposition techniques that can produce high quality materials and attractive proposed device concepts. In addition to their use on their own, the interest is building on the use of these materials in a stack also. Ferroelectrics are dielectric materials that have spontaneous polarization in certain temperature range and show nonlinear polarization–electric field dependence called a hysteresis loop. The outstanding properties of the ferroelectrics are due to non-centro-symmetric crystal structure resulting from slight distortion of the cubic perovskite structure. The ferroelectric materials are ferroelastic also in that a change in shape results in a change in the electric polarization (thus electric field) developed in the crystal and vice versa. Therefore they can be used to transform acoustic wav...

Processing, Structure, Properties, and Applications of PZT Thin Films

We review and critique the recent developments on multifunctional oxide materials, which are gaining a good deal of interest. Recongnizing that this is a vast area, the focus of this treatment is mainly on high-κ dielectric, ferroelectric, magnetic, and multiferroic materials. Also, we consider ferrimagnetic oxides in the context of the new, rapidly developing field of negative-index metamaterials. This review is motivated by the recent resurgence of interest in complex oxides owing to their coupling of electrical, magnetic, thermal, mechanical, and optical properties, which make them suitable for a wide variety of applications, including heat, motion, electric, and magnetic sensors; tunable and compact microwave passive components; surface acoustic wave devices; nonlinear optics; and nonvolatile memory, and pave the way for designing multifunctional devices and unique applications in spintronics and negative refraction-index media. For most of the materials treated here, structural and physical propertie...

Oxides, Oxides, and More Oxides: High-κ Oxides, Ferroelectrics, Ferromagnetics, and Multiferroics

High quality n-ZnO films on commercial p-type 6H–SiC substrates have been grown by plasma-assisted molecular-beam epitaxy, and n-ZnO∕p-SiC heterojunction mesa structures have been fabricated. Current-voltage characteristics of the structures had a very good rectifying diode-like behavior with a leakage current less than 2×10−4A∕cm2 at −10V, a breakdown voltage greater than 20V, a forward turn on voltage of ∼5V, and a forward current of ∼2A∕cm2 at 8V. Photosensitivity of the diodes was studied at room temperature and a photoresponsivity of as high as 0.045A∕W at −7.5V reverse bias was observed for photon energies higher than 3.0eV.

https://scholarscompass.vcu.edu/cgi/viewcontent.cgi?article=1074&context=egre_pubs

Photoresponse of n-ZnO∕p-SiC heterojunction diodes grown by plasma-assisted molecular-beam epitaxy

We demonstrated ferroelectric field effect transistors (FFETs) with hysteretic I-V characteristics in a modulation-doped field effect transistors (MODFET) AlGaN∕GaN platform with ferroelectric Pb(Zr,Ti)O3 between a GaN channel and a gate metal. The pinch-off voltage was about 6–7V comparable to that of conventional Schottky gate MODFET. Counterclockwise hysteresis appeared in the transfer characteristics with a drain current shift of ∼5mA for zero gate-to-source voltage. This direction is opposite and much more pronounced than the defect induced clockwise hysteresis in conventional devices, which suggests that the key factor contributing to the counterclockwise hysteresis of the FFET is the ferroelectric switching effect of the lead zirconate titanate gate.

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Ya. I. Alivov

Papers

A comprehensive review of zno materials and devices

Processing, Structure, Properties, and Applications of PZT Thin Films

Oxides, Oxides, and More Oxides: High-κ Oxides, Ferroelectrics, Ferromagnetics, and Multiferroics

Photoresponse of n-ZnO∕p-SiC heterojunction diodes grown by plasma-assisted molecular-beam epitaxy

Fabrication and current-voltage characterization of a ferroelectric lead zirconate titanate/AlGaN∕GaN field effect transistor