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Hakan Usta

Researcher at Abdullah Gül University

Publications -  80
Citations -  5150

Hakan Usta is an academic researcher from Abdullah Gül University. The author has contributed to research in topics: Organic semiconductor & HOMO/LUMO. The author has an hindex of 29, co-authored 72 publications receiving 4422 citations. Previous affiliations of Hakan Usta include University of Palermo & Northwestern University.

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n-Channel Semiconductor Materials Design for Organic Complementary Circuits

TL;DR: This Account highlights the advances the team has made toward realizing moderately and highly electron-deficient n-channel oligomers and polymers based on oligothiophene, arylenediimide, and (bis)indenofluorene skeletons and provides a road map for developing functional, complementary organic circuitry, which requires combining p- and n- channel transistors.
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Organic light-emitting transistors with an efficiency that outperforms the equivalent light-emitting diodes

TL;DR: The concept of using a p-channel/emitter/n-channel trilayer semiconducting heterostructure in OLETs is introduced, providing a new approach to markedly improve OLET performance and address general fundamental optoelectronic and photonic issues.
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Design, synthesis, and characterization of ladder-type molecules and polymers. Air-stable, solution-processable n-channel and ambipolar semiconductors for thin-film transistors via experiment and theory.

TL;DR: Analysis of the operationalAir-stabilities of a series of thin films having different crystallinities, orientations, and morphologies suggests that operational air-stability for thermodynamically predicted air-stable semiconductors is principally governed by LUMO energetics with minimal contribution from thin-film microstructure.
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Dithienosilole- and dibenzosilole-thiophene copolymers as semiconductors for organic thin-film transistors.

TL;DR: OfETs based on this polymer class exhibit excellent ambient operational stability and have low turn-on voltages and current on/off ratios.
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Synthesis, characterization, and transistor response of semiconducting silole polymers with substantial hole mobility and air stability. Experiment and theory.

TL;DR: A direct correlation between the hole injection barrier and both TFT turn-on voltage and TFT polymer hole mobility is identified and discussed, in combination with thin-film morphological characteristics, to explain the observed OTFT performance trends.