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Raffaella Capelli

Researcher at AREA Science Park

Publications -  75
Citations -  2154

Raffaella Capelli is an academic researcher from AREA Science Park. The author has contributed to research in topics: Ambipolar diffusion & Organic semiconductor. The author has an hindex of 20, co-authored 71 publications receiving 1963 citations. Previous affiliations of Raffaella Capelli include University of Rome Tor Vergata & University of Strasbourg.

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Organic light-emitting transistors with an efficiency that outperforms the equivalent light-emitting diodes

TL;DR: The concept of using a p-channel/emitter/n-channel trilayer semiconducting heterostructure in OLETs is introduced, providing a new approach to markedly improve OLET performance and address general fundamental optoelectronic and photonic issues.
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High‐Mobility Ambipolar Transport in Organic Light‐Emitting Transistors

TL;DR: In this article, a two-component layered structure of organic light-emitting transistors (OLETs) with balanced ambipolar transport and mobility as large as 3 × 10 cm V s is presented.
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Luminescent ethynyl-pyrene liquid crystals and gels for optoelectronic devices.

TL;DR: Two functional ethynyl-pyrene derivatives have been designed and synthesized by di- and tetra-substitutions of bromo pyrene derivatives with N-(4-ethynylphenyl)-3,4,5-tris(hexadecyloxy)benzamide fragments to produce robust and highly fluorescent gels in DMF, toluene, and cyclohexane.
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Integration of silk protein in organic and light-emitting transistors.

TL;DR: The integration of a natural protein into electronic and optoelectronic devices by using silk fibroin as a thin film dielectric in an organic thin film field-effect transistor (OFET) ad an organic light emitting transistor device (OLET) structures is presented.
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Tetracene-based organic light-emitting transistors: optoelectronic properties and electron injection mechanism

TL;DR: In this article, a model for the electron injection mechanism in a p-type organic transistor was proposed, and the dependence of the external quantum efficiency on drain-and gate-bias was investigated.