Michele Muccini

TL;DR: Recent advances and future prospects of light-emitting field-effect transistors are explored, with particular emphasis on organic semiconductors and the role played by the material properties, device features and the active layer structure in determining the device performances.

Abstract: Since 1987, high-luminance low-voltage driven devices based on tris(8-hydroxyquinoline)aluminum(III) (Alq3) opened the route to design low-cost large area displays and illuminators. Despite the large number of studies devoted to this material, very little is known about its basic structural and optical properties in the solid state. Therefore, we have investigated the structure(s) and the correlation between intermolecular interactions and optical properties in various Alq3 systems, including solution, amorphous thin films, and different crystalline forms. Two novel unsolvated polymorphs of Alq3, namely, α-Alq3 and β-Alq3, have been synthesized and their crystalline structures determined from X-ray diffraction data on powders (α) and single crystals (β). Crystals of α-Alq3 are triclinic, space group P-1, a = 6.2586(8) A, b = 12.914(2) A; c = 14.743(2) A, α = 109.66(1)°; β = 89.66(1)°, and γ = 97.68(1)°; crystals of β-Alq3 are triclinic, space group P-1, a = 8.4433(6) A, b = 10.2522(8) A; c = 13.1711(10) A...

TL;DR: The concept of using a p-channel/emitter/n-channel trilayer semiconducting heterostructure in OLETs is introduced, providing a new approach to markedly improve OLET performance and address general fundamental optoelectronic and photonic issues.

TL;DR: In this article, a light-emitting organic field effect transistor (OFET) with pronounced ambipolar current characteristics is demonstrated, where the light intensity is controlled by both the drain-source voltage VDS and the gate voltage VG.

TL;DR: In this article, a two-component layered structure of organic light-emitting transistors (OLETs) with balanced ambipolar transport and mobility as large as 3 × 10 cm V s is presented.