Hanhwi Jang

TL;DR: The effects of QDs doped with hole transport materials (hybrid QDs) on the electrical characteristics of a QLED are investigated and a p-type doping effect is shown, which leads to a change in the density of the carriers.

TL;DR: In this paper, a high power factor can be achieved by incorporating Cu into the ABS system via the nestification of conduction bands when a disordering between Ag and Bi occurs, which simultaneously increases the density-of-states effective mass and carrier concentration while not reducing the carrier mobility significantly.

TL;DR: Kang et al. as discussed by the authors showed that the direction of the exchange bias is gradually modulated up to ±22 degrees by an in-plane current, which is independent of the NiFe thickness.

TL;DR: In this paper, a hybrid surface-enhanced Raman spectroscopy (SERS) substrate utilizing Ag as plasmonic structures and GaN as charge transfer enhancement centers is presented.

TL;DR: In this article, a high thermoelectric dimensionless figure of merit, zT ≈ 2.1 at 723 K, was achieved by suppressing the vacancy formation via dopant balancing.