This updated version of the popular handbook further explains all aspects of physical vapor deposition (PVD) process technology from the characterizing and preparing the substrate material, through deposition processing and film characterization, to post-deposition processing. The emphasis of the new edition remains on the aspects of the process flow that are critical to economical deposition of films that can meet the required performance specifications, with additional information to support the original material. The book covers subjects seldom treated in the literature: substrate characterization, adhesion, cleaning and the processing. The book also covers the widely discussed subjects of vacuum technology and the fundamentals of individual deposition processes. However, the author uniquely relates these topics to the practical issues that arise in PVD processing, such as contamination control and film growth effects, which are also rarely discussed in the literature. In bringing these subjects together in one book, the reader can understand the interrelationship between various aspects of the film deposition processing and the resulting film properties. The author draws upon his long experience with developing PVD processes and troubleshooting the processes in the manufacturing environment, to provide useful hints for not only avoiding problems, but also for solving problems when they arise. He uses actual experiences, called 'war stories', to emphasize certain points. Special formatting of the text allows a reader who is already knowledgeable in the subject to scan through a section and find discussions that are of particular interest. The author has tried to make the subject index as useful as possible so that the reader can rapidly go to sections of particular interest. Extensive references allow the reader to pursue subjects in greater detail if desired. The book is intended to be both an introduction for those who are new to the field and a valuable resource to those already in the field. The discussion of transferring technology between R&D and manufacturing provided in Appendix 1, will be of special interest to the manager or engineer responsible for moving a PVD product and process from R&D into production. Appendix 2 has an extensive listing of periodical publications and professional societies that relate to PVD processing. The extensive Glossary of Terms and Acronyms provided in Appendix 3 will be of particular use to students and to those not fully conversant with the terminology of PVD processing or with the English language. This title is fully revised and updated to include the latest developments in PVD process technology. It includes 'War stories' drawn from the author's extensive experience emphasize important points in development and manufacturing. Appendices include listings of periodicals and professional societies, terms and acronyms, and material on transferring technology between R&D and manufacturing.

Handbook of physical vapor deposition (PVD) processing

The field of plasma etching is reviewed. Plasma etching, a revolutionary extension of the technique of physical sputtering, was introduced to integrated circuit manufacturing as early as the mid 1960s and more widely in the early 1970s, in an effort to reduce liquid waste disposal in manufacturing and achieve selectivities that were difficult to obtain with wet chemistry. Quickly, the ability to anisotropically etch silicon, aluminum, and silicon dioxide in plasmas became the breakthrough that allowed the features in integrated circuits to continue to shrink over the next 40 years. Some of this early history is reviewed, and a discussion of the evolution in plasma reactor design is included. Some basic principles related to plasma etching such as evaporation rates and Langmuir–Hinshelwood adsorption are introduced. Etching mechanisms of selected materials, silicon, silicon dioxide, and low dielectric-constant materials are discussed in detail. A detailed treatment is presented of applications in current silicon integrated circuit fabrication. Finally, some predictions are offered for future needs and advances in plasma etching for silicon and nonsilicon-based devices.

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Plasma etching: Yesterday, today, and tomorrow

Thermal stability of nitride thin films

The deposition of amorphous hydrogenated hard carbon (a–C:H) thin films from benzene vapor in a rf plasma is described. a–C:H was deposited on glass, quartz, Si, Ge, and GaAs. Negative self‐bias VB and gas pressure P are shown to be the two significant parameters for an accurate control of the deposition process. The dependence of growth rate and deposition temperature on VB and P was determined; this gives an empirical relation for the average energy E of the ions forming the thin films. Refractive index (1.85–2.20 in the IR), optical gap (0.8–1.8 eV) and density (1.5–1.8 g/cm3) of a–C:H was measured. The optical gap varies linearly with the content of bonded hydrogen in the films. The density of a–C:H is proportional to the average ion energy E. We demonstrate the application of a–C:H as antireflective coating on Ge for 10.6 μm (reflection <0.2% at 10.6 μm) and as terminating layer of an optical multilayer stack.

rf‐plasma deposited amorphous hydrogenated hard carbon thin films: Preparation, properties, and applications

Diamond-like carbon (DLC) films combine several excellent properties like high hardness, low friction coefficients and chemical inertness. The DLC coating material can be further classified in two main groups, the hydrogenated amorphous carbon (a-C:H, ta-C:H) and the hydrogen free amorphous carbon (a-C, ta-C). By adding other elements like metals (a-C:H:Me) or non-metal elements like silicon, oxygen, fluorine or others (a-C:H:X), several modifications of the properties can be adjusted according to application requirements. First reports on hard amorphous carbon films were published in the 1950s and about 20 years later there began worldwide intensive research activities on DLC. In the following years the number of publications increased continuously and the importance for industrial applications became more and more evident. Several deposition techniques were applied to prepare a-C:H, ta-C, metal containing a-C:H:Me and non-metal containing a-C:H:X coatings. In parallel the structure and deposition mechanisms of DLC coatings were extensively studied. An essential obstacle for a broad industrial application was the high compressive stress level in a-C:H films causing delamination and limiting the film thicknesses. With metal based intermediate layer systems most adhesion problems could be solved satisfactorily and thus from the mid-1990s the pre-conditions for a broad application especially in the automotive industry were given. With modified a-C:H:X and a-C:X coatings a considerable friction reduction or surface energy adjustments could be achieved.

History of diamond-like carbon films — From first experiments to worldwide applications

SOI enables reduced capacitive coupling in RF power technology but the thick oxide causes thermal problems. In this paper, the authors present a new type of substrate, where the oxide insulator and ...

LDMOS-transistors on semi-insulating silicon-on-polycrystalline-silicon carbide substrates for improved RF and thermal properties

Dry Cleaning of Contact Holes Using Ultraviolet (UV) Generated Ozone

This work presents a proof-of-concept ion-sensitive device operating in electrolytes. The device, i.e., an ion-gated bipolar amplifier (IGBA), consists of a modified ion-sensitive field-effect transistor (ISFET) intimately integrated with a vertical bipolar junction transistor for immediate current amplification without introducing additional noise. With the current non-optimized design, the IGBA is already characterized by a 70-fold internal amplification of the ISFET output signal. This signal amplification is retained when the IGBA is used for monitoring pH variations. The tight integration significantly suppresses the interference of the IGBA signal by external noise, which leads to an improvement in signal-to-noise performance compared to its ISFET reference. The IGBA concept is especially suitable for biochips with millions of electric sensors that are connected to peripheral readout circuitry via extensive metallization which may in turn invite external interferences leading to contamination of the signal before it reaches the first external amplification stage.

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An ion-gated bipolar amplifier for ion sensing with enhanced signal and improved noise performance

For selective etching of SiO2 on silicon, gases or gas mixtures containing hydrogen are often used. Hydrogen from the glow discharge promotes the formation of a thin filmpolymer layer responsible for the selectivity of the etching process. The reactive ion etch (RIE) process is known to create damage in the silicon substrate. The influence of hydrogen on the damage and deactivation of dopants is investigated in the present work. The distribution of hydrogen in silicon, after different etching and annealing conditions have been studied. The influence of the RIE process on the charge carrier concentration in silicon has been investigated. Various analytical techniques like contact resistivity measurements, four point probe measurements, and Hall measurements have been used to determine the influence of the RIE process on the electrical properties of processed silicon wafers. The hydrogen profile in as‐etched and post annealed wafers was determined by the 1H(1 5N,αγ)1 2C nuclear reaction. The depth of the deactivated surface layer is discussed in terms of the impinging hydrogen ion energy, i.e., the possibility of H+ ions to pick up an energy equal to the peak‐to‐peak voltage of the rf signal.

Hans Norström

Papers

LDMOS-transistors on semi-insulating silicon-on-polycrystalline-silicon carbide substrates for improved RF and thermal properties

Dry Cleaning of Contact Holes Using Ultraviolet (UV) Generated Ozone

An ion-gated bipolar amplifier for ion sensing with enhanced signal and improved noise performance

Silicon surface damage caused by reactive ion etching in fluorocarbon gas mixtures containing hydrogen

Summary Abstract: Redistribution of dopants in TiSi2‐polycrystalline bilayers during heat treatment