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Haoze Shi

Researcher at Zhejiang Sci-Tech University

Publications -  12
Citations -  675

Haoze Shi is an academic researcher from Zhejiang Sci-Tech University. The author has contributed to research in topics: Computer science & Thin film. The author has an hindex of 6, co-authored 7 publications receiving 371 citations.

Papers
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Self-Powered Ultraviolet Photodetector with Superhigh Photoresponsivity (3.05 A/W) Based on the GaN/Sn:Ga2O3 pn Junction.

TL;DR: This study generates a super-high-performance self-powered UV photodetector based on a GaN/Sn:Ga2O3 pn junction that has a high UV/visible rejection ratio, and a fast photoresponse time of 18 ms without bias.
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Construction of GaN/Ga2O3 p–n junction for an extremely high responsivity self-powered UV photodetector

TL;DR: In this article, a self-powered ultraviolet photodetector was constructed with GaN/Ga2O3 p-n junction by depositing n-type Ga 2O3 thin film on Al2O 3 single crystals substrate covered by p-type GAN thin film, which exhibits a typical rectification behavior in dark and excellent photovoltaic characteristics under 365 nm and 254 nm light illumination.
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Decrease of oxygen vacancy by Zn-doped for improving solar-blind photoelectric performance in β -Ga 2 O 3 thin films

TL;DR: In this article, high-oriented Zn-doped β-Ga2O3 thin films with different dopant concentrations were grown on (0001) sapphire substrates by radio frequency magnetron sputtering.
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Geographical and temporal encoding for improving the estimation of PM2.5 concentrations in China using end-to-end gradient boosting

TL;DR: In this article , a geospatial-temporal joint code is proposed to characterize the influence of spatial-temoral information hidden in satellite-based aerosol products, which can reveal the relationship between the PM2.5 concentration and its location and observation time.
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Evidence for the bias-driven migration of oxygen vacancies in amorphous non-stoichiometric gallium oxide

TL;DR: The conductivity of gallium oxide thin films is strongly dependent on the growth temperature when they are deposited by pulsed laser deposition under vacuum environment, exhibiting an insulative-to-metallic transition with the decrease of the temperature as mentioned in this paper.