Z
Zhengwei Chen
Researcher at Beijing University of Posts and Telecommunications
Publications - 42
Citations - 1538
Zhengwei Chen is an academic researcher from Beijing University of Posts and Telecommunications. The author has contributed to research in topics: Pulsed laser deposition & Thin film. The author has an hindex of 16, co-authored 39 publications receiving 885 citations. Previous affiliations of Zhengwei Chen include Saga University & Zhejiang University.
Papers
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Journal ArticleDOI
Self-Powered Ultraviolet Photodetector with Superhigh Photoresponsivity (3.05 A/W) Based on the GaN/Sn:Ga2O3 pn Junction.
Daoyou Guo,Yuanli Su,Haoze Shi,Peigang Li,Nie Zhao,Junhao Ye,Shunli Wang,Aiping Liu,Zhengwei Chen,Chaorong Li,Weihua Tang +10 more
TL;DR: This study generates a super-high-performance self-powered UV photodetector based on a GaN/Sn:Ga2O3 pn junction that has a high UV/visible rejection ratio, and a fast photoresponse time of 18 ms without bias.
Journal ArticleDOI
Construction of GaN/Ga2O3 p–n junction for an extremely high responsivity self-powered UV photodetector
Peigang Li,Haoze Shi,Kai Chen,Daoyou Guo,Wei Cui,Yusong Zhi,Shunli Wang,Zhenping Wu,Zhengwei Chen,Weihua Tang +9 more
TL;DR: In this article, a self-powered ultraviolet photodetector was constructed with GaN/Ga2O3 p-n junction by depositing n-type Ga 2O3 thin film on Al2O 3 single crystals substrate covered by p-type GAN thin film, which exhibits a typical rectification behavior in dark and excellent photovoltaic characteristics under 365 nm and 254 nm light illumination.
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Review of Ga2O3-based optoelectronic devices
TL;DR: In this paper, the authors provide a review on Ga2O3-based optoelectronics, with a detailed introduction of the phosphors and EL devices and a concise summary of solar-blind photodetectors.
Journal ArticleDOI
Toward controlling the carrier density of Si doped Ga2O3 films by pulsed laser deposition
Fabi Zhang,Fabi Zhang,Makoto Arita,Xu Wang,Zhengwei Chen,Katsuhiko Saito,Tooru Tanaka,Mitsuhiro Nishio,Teruaki Motooka,Qixin Guo +9 more
TL;DR: In this paper, the electrical properties of Si-doped Ga2O3 films grown by pulsed laser deposition technique (PLD) have been investigated and it has been shown that the carrier density of the films is controllable by Si doping by PLD.
Journal ArticleDOI
High sensitive and stable self-powered solar-blind photodetector based on solution-processed all inorganic CuMO2/Ga2O3 pn heterojunction
Chao Wu,Linlin Qiu,Shan Li,Daoyou Guo,Daoyou Guo,Peigang Li,Shunli Wang,Pingfan Du,Zhengwei Chen,Aiping Liu,Xianghu Wang,Huaping Wu,Fengmin Wu,Weihua Tang +13 more
TL;DR: In this article, the authors proposed a pn-type photodetector with high sensitivity, stable and energy saving and has wide practical application prospect in solar-blind detection systems.