Z
Zhenping Wu
Researcher at Beijing University of Posts and Telecommunications
Publications - 133
Citations - 4627
Zhenping Wu is an academic researcher from Beijing University of Posts and Telecommunications. The author has contributed to research in topics: Thin film & Photodetector. The author has an hindex of 27, co-authored 107 publications receiving 2831 citations. Previous affiliations of Zhenping Wu include University of Geneva.
Papers
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Journal ArticleDOI
Fabrication of β-Ga_2O_3 thin films and solar-blind photodetectors by laser MBE technology
Daoyou Guo,Zhenping Wu,Peigang Li,Y. H. An,Han Liu,Xuncai Guo,Hui Yan,G. F. Wang,Changlong Sun,Linghong Li,Weihua Tang +10 more
TL;DR: In this article, a laser molecular beam epitaxy technology was employed to deposit β-gallium oxide (β-Ga2O3) on (0001) sapphire substrates.
Journal ArticleDOI
Oxygen vacancy tuned Ohmic-Schottky conversion for enhanced performance in β-Ga2O3 solar-blind ultraviolet photodetectors
Daoyou Guo,Zhenping Wu,Y. H. An,Xuncai Guo,Xulong Chu,Changlong Sun,Linghong Li,Peigang Li,Peigang Li,Weihua Tang +9 more
TL;DR: In this paper, metal/semiconductor/metal structured photodetectors were fabricated using as-grown film and annealed film separately, where the Schottky barrier controlled electron transport and the quantity of photogenerated carriers trapped by oxygen vacancy significant decreasing.
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Zero-Power-Consumption Solar-Blind Photodetector Based on β-Ga2O3/NSTO Heterojunction
Daoyou Guo,Daoyou Guo,Han Liu,Peigang Li,Peigang Li,Zhenping Wu,Shunli Wang,Can Cui,Chaorong Li,Weihua Tang,Weihua Tang +10 more
TL;DR: The results strongly suggest that a photodetector based on β-Ga2O3 thin-film heterojunction structure can be practically used to detect weak solar-blind signals because of its high photoconductive gain.
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Construction of GaN/Ga2O3 p–n junction for an extremely high responsivity self-powered UV photodetector
Peigang Li,Haoze Shi,Kai Chen,Daoyou Guo,Wei Cui,Yusong Zhi,Shunli Wang,Zhenping Wu,Zhengwei Chen,Weihua Tang +9 more
TL;DR: In this article, a self-powered ultraviolet photodetector was constructed with GaN/Ga2O3 p-n junction by depositing n-type Ga 2O3 thin film on Al2O 3 single crystals substrate covered by p-type GAN thin film, which exhibits a typical rectification behavior in dark and excellent photovoltaic characteristics under 365 nm and 254 nm light illumination.
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Review of Ga2O3-based optoelectronic devices
TL;DR: In this paper, the authors provide a review on Ga2O3-based optoelectronics, with a detailed introduction of the phosphors and EL devices and a concise summary of solar-blind photodetectors.